Abstract: Aggregate processing systems, methods, and apparatus are described. In some embodiments, a plant is configurable in one of a plurality of configurations.

Abstract: Aggregate processing systems, methods, and apparatus are described. In some embodiments, a plant is configurable in one of a plurality of configurations, e.g. by sliding one of a plurality of chutes, hoppers, or flumes into a frame and/or by modifying a height of the frame. In some embodiments, a roller floor assembly is in a maintenance configuration when a chute is in a maintenance position. In some embodiments, a flume includes one or more diverters for moving a subset of material from one side of the flume to another.

Abstract: Aggregate processing systems, methods and apparatus are described. Some embodiments include a plurality of equipment criteria sensors, product quantity sensors, product characteristic sensors, and/or actuators. Some embodiments include a control system incorporating algorithm logic. Some embodiments include a control system incorporating artificial intelligence logic.

Abstract: Aggregate processing systems, methods, and apparatus are described. In some embodiments, a plant is configurable in one of a plurality of configurations.

Abstract: A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

Abstract: Aggregate processing systems, methods, and apparatus are described. In some embodiments, a plant is configurable in one of a plurality of configurations, e.g. by sliding one of a plurality of chutes, hoppers, or flumes into a frame and/or by modifying a height of the frame. In some embodiments, a roller floor assembly is in a maintenance configuration when a chute is in a maintenance position. In some embodiments, a flume includes one or more diverters for moving a subset of material from one side of the flume to another.

Abstract: A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

Abstract: A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

Abstract: A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

Abstract: A centraliser for centring one pipe within another comprises a plurality of skids which extend outwards from the outer surface of an inner pipe into contact with the inner surface of an outer pipe The skids are independent of one another and are secured to the outer surface of a pipe with the skids extending radially from the pipe surface. The skids have apertures to receive a securing band or bands which can be passed around the pipe, received in the apertures of the skids and tensioned to secure the skids to the pipe surface.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Abstract: A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.

Abstract: A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.

Abstract: A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.