Abstract: Apparatus and methods for chopper amplifiers are provided herein. In certain configurations, a chopper amplifier includes at least one differential transistor bank including a selection circuit and a plurality of transistors. The selection circuit can select a first portion of the transistors for operation in a first transistor group and a second portion of the transistors for operation in a second transistor group. During calibration, the chopper amplifier's input offset can be observed for different transistor configurations of the differential transistor banks. Although the transistors of a particular bank can be designed to have about the same drive-strength and/or geometry, the chopper amplifier can have a different input offset in different transistor configurations due to manufacturing mismatch between transistors, such as process variation.

Abstract: Apparatus and methods for chopper amplifiers are provided herein. In certain configurations, a chopper amplifier includes at least one differential transistor bank including a selection circuit and a plurality of transistors. The selection circuit can select a first portion of the transistors for operation in a first transistor group and a second portion of the transistors for operation in a second transistor group. During calibration, the chopper amplifier's input offset can be observed for different transistor configurations of the differential transistor banks. Although the transistors of a particular bank can be designed to have about the same drive-strength and/or geometry, the chopper amplifier can have a different input offset in different transistor configurations due to manufacturing mismatch between transistors, such as process variation.

Abstract: An integrated circuit device comprises a common-gated dual-oxide MOSFET including a protective device and a MOSFET. A common gate electrode serves as a gate electrode of the protective device and as a gate of the MOSFET. The protective device comprises a first gate dielectric having a first thickness over a first channel region and the MOSFET comprises a second gate dielectric thicker than the first gate dielectric over a second channel region. During a plasma process, a first current can flow through the first dielectric that is higher than a second current through the second dielectric.

Abstract: An integrated circuit device comprises a common-gated dual-oxide MOSFET including a protective device and a MOSFET. A common gate electrode serves as a gate electrode of the protective device and as a gate of the MOSFET. The protective device comprises a first gate dielectric having a first thickness over a first channel region and the MOSFET comprises a second gate dielectric thicker than the first gate dielectric over a second channel region. During a plasma process, a first current can flow through the first dielectric that is higher than a second current through the second dielectric.