Abstract: An injector includes an injector body having an upper portion defining a top surface. An injector core is received through the upper portion. The injector core has an interfacing surface that is disposed adjacent and raised with respect to the top surface. A cover member is disposed on the upper portion of the injector body. The cover member has a top wall for receiving at least a portion of the injector core, a side wall extending from at least a portion of the top wall, and a lip that is adapted to be attached to the other of the side wall or the injector body through a snap-fit connection. Upon attachment of the lip to the other of the side wall or the injector body, the top wall of the cover member presses on the interfacing surface of the injector core to restrict an axial movement of the injector core relative to the injector body along the longitudinal axis.

Abstract: An injector includes an injector body having an upper portion defining a top surface. An injector core is received through the upper portion. The injector core has an interfacing surface that is disposed adjacent and raised with respect to the top surface. A cover member is disposed on the upper portion of the injector body. The cover member has a top wall for receiving at least a portion of the injector core, a side wall extending from at least a portion of the top wall, and a lip that is adapted to be attached to the other of the side wall or the injector body through a snap-fit connection. Upon attachment of the lip to the other of the side wall or the injector body, the top wall of the cover member presses on the interfacing surface of the injector core to restrict an axial movement of the injector core relative to the injector body along the longitudinal axis.

Abstract: An injector includes an injector body having an upper portion defining a top surface. An injector core is received through the upper portion. The injector core has an interfacing surface that is disposed adjacent and raised with respect to the top surface. A cover member is disposed on the upper portion of the injector body. The cover member has a top wall disposed proximal to the top surface of the injector body and defining an aperture for receiving the injector core therethrough, a side wall extending from the top wall, and a lip that is disposed at an end of the side wall. The lip is adapted to be attached to a circumferential wall of the injector body through a snap-fit connection. Upon attachment, the top wall presses on the interfacing surface of the injector core to restrict an axial movement of the injector core relative to the injector body.

Abstract: An injector includes an injector body having an upper portion defining a top surface. An injector core is received through the upper portion. The injector core has an interfacing surface that is disposed adjacent and raised with respect to the top surface. A cover member is disposed on the upper portion of the injector body. The cover member has a top wall disposed proximal to the top surface of the injector body and defining an aperture for receiving the injector core therethrough, a side wall extending from the top wall, and a lip that is disposed at an end of the side wall. The lip is adapted to be attached to a circumferential wall of the injector body through a snap-fit connection. Upon attachment, the top wall presses on the interfacing surface of the injector core to restrict an axial movement of the injector core relative to the injector body.

Abstract: An injector for injecting a reagent includes a first injector body and a second injector body. The first injector body includes an outlet opening. The second injector body includes a reagent tube. The second injector body is movable relative to the first injector body. The injector further includes a valve assembly at least partly enclosed by the first injector body. The valve assembly is configured to selectively dispense the reagent through the outlet opening of the first injector body. The injector further includes a spring member positioned between the first injector body and the second injector body. The spring member is pre-loaded to bias the second injector body towards the first injector body. The spring member is further configured to limit a maximum movement of the second injector body relative to the first injector body in response to expansion of the reagent during freezing.

Abstract: An exhaust aftertreatment system may include a reductant tank, a gaseous ammonia source, an injector, first conduit and a second conduit. The injector may receive the liquid reductant from the reductant tank and the gaseous ammonia from the gaseous ammonia source and inject the liquid reductant into a stream of exhaust gas in a first mode, inject the gaseous ammonia into the stream of exhaust gas in a second mode, and both the liquid reductant and the gaseous ammonia into the stream of exhaust gas in a third mode. The first conduit may communicate liquid reductant from the reductant tank to the injector. The second conduit may communicate gaseous ammonia from the gaseous ammonia source to the injector.

Abstract: An injector for injecting a reagent includes a first injector body and a second injector body. The first injector body includes an outlet opening. The second injector body includes a reagent tube. The second injector body is movable relative to the first injector body. The injector further includes a valve assembly at least partly enclosed by the first injector body. The valve assembly is configured to selectively dispense the reagent through the outlet opening of the first injector body. The injector further includes a spring member positioned between the first injector body and the second injector body. The spring member is pre-loaded to bias the second injector body towards the first injector body. The spring member is further configured to limit a maximum movement of the second injector body relative to the first injector body in response to expansion of the reagent during freezing.

Abstract: An exhaust aftertreatment system may include a reductant tank, a gaseous ammonia source, an injector, first conduit and a second conduit. The injector may receive the liquid reductant from the reductant tank and the gaseous ammonia from the gaseous ammonia source and inject the liquid reductant into a stream of exhaust gas in a first mode, inject the gaseous ammonia into the stream of exhaust gas in a second mode, and both the liquid reductant and the gaseous ammonia into the stream of exhaust gas in a third mode. The first conduit may communicate liquid reductant from the reductant tank to the injector. The second conduit may communicate gaseous ammonia from the gaseous ammonia source to the injector.

Abstract: A filter assembly may include an outer insert and an inner insert. The outer insert having an aperture and a plurality of outer grooves. The outer grooves are formed in a radially outer periphery of the outer insert and are separated from each other and the aperture. The inner insert may be disposed within the aperture. A plurality of inner grooves may be formed in a radially outer periphery of the inner insert. Each of the outer and inner grooves may have a closed axial end and an open axial end.

Abstract: A filter assembly may include an outer insert and an inner insert. The outer insert having an aperture and a plurality of outer grooves. The outer grooves are formed in a radially outer periphery of the outer insert and are separated from each other and the aperture. The inner insert may be disposed within the aperture. A plurality of inner grooves may be formed in a radially outer periphery of the inner insert. Each of the outer and inner grooves may have a closed axial end and an open axial end.

Abstract: A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlxGa1-xAs is provided, as well as the resultant device. In general, each thick AlxGa1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlxGa1-xAszP1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. The AlxGa1-xAszP1-z layer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.

Abstract: A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.

Abstract: A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.

Abstract: Embodiments of the present invention are directed to method of fabrication of a broadband emitter array. Embodiments of the present invention may grown a first set of emitters possessing a first quantum well characteristic (e.g., quantum well thickness or composition). A portion of the first set of emitters is removed by etching. In place of the removed emitters, a second set of emitters is regrown with said second set of emitters possessing a different quantum well characteristic. By fabricating the emitters sets in this manner, a unitary emitter array may be fabricated that possesses an increased bandwidth, e.g., the first and second sets of emitters may be associated with different center wavelengths. Embodiments of the present invention may utilize emitter arrays fabricated in this manner in, for example, incoherently beam combined (IBC) lasers and in Raman amplifier systems.

Abstract: Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer.