Patents by Inventor Mark Ghinovker
Mark Ghinovker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240035812Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.Type: ApplicationFiled: May 8, 2023Publication date: February 1, 2024Inventors: Yoel Feler, Mark Ghinovker
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Patent number: 11874605Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.Type: GrantFiled: July 6, 2020Date of Patent: January 16, 2024Assignee: KLA CorporationInventors: Michael E. Adel, Inna Tarshish-Shapir, Shiming Wei, Mark Ghinovker
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Patent number: 11862524Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11809090Abstract: A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.Type: GrantFiled: August 18, 2020Date of Patent: November 7, 2023Assignee: KLA CorporationInventors: Anna Golotsvan, Inna Steely-Tarshish, Mark Ghinovker, Rawi Dirawi
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Publication number: 20230324810Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11774863Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to define a plurality of overlay targets comprising first target features formed in the first film layer having respective first locations, which are spaced apart by first nominal distances, and second target features formed in the second film layer having respective second locations, which are spaced apart by second nominal distances, which are different from the first nominal distances. An image of the semiconductor substrate is processed to measure respective displacements between the first and second target locations in each of the overlay targets, and to estimate both an actual overlay error between the patterning of the first and second film layers and a measurement error of the imaging assembly.Type: GrantFiled: October 21, 2021Date of Patent: October 3, 2023Assignee: KLA CORPORATIONInventors: Mark Ghinovker, Yoel Feler
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Publication number: 20230281779Abstract: A method of semiconductor metrology includes patterning a film layer on a semiconductor substrate to define a first field on the semiconductor substrate with a first pattern comprising at least a first target feature within a first margin along a first edge of the first field and to define a second field, which abuts the first field, with a second pattern comprising at least a second target feature within a second margin along a second edge of the second field, such that the second edge of the second field adjoins the first edge of the first field. The first target feature in the first margin is adjacent to the second target feature in the second margin without overlapping the second target feature. An image is captured of at least the first and second target features and is processed to detect a misalignment between the first and second fields.Type: ApplicationFiled: March 3, 2022Publication date: September 7, 2023Inventors: Mark GHINOVKER, Yoel FELER
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Patent number: 11720031Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: GrantFiled: September 28, 2021Date of Patent: August 8, 2023Assignee: KLA CorporationInventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11703767Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: GrantFiled: September 28, 2021Date of Patent: July 18, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feier, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11686576Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.Type: GrantFiled: November 16, 2020Date of Patent: June 27, 2023Assignee: KLA CorporationInventors: Yoel Feler, Mark Ghinovker
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Publication number: 20230129618Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to define a plurality of overlay targets comprising first target features formed in the first film layer having respective first locations, which are spaced apart by first nominal distances, and second target features formed in the second film layer having respective second locations, which are spaced apart by second nominal distances, which are different from the first nominal distances. An image of the semiconductor substrate is processed to measure respective displacements between the first and second target locations in each of the overlay targets, and to estimate both an actual overlay error between the patterning of the first and second film layers and a measurement error of the imaging assembly.Type: ApplicationFiled: October 21, 2021Publication date: April 27, 2023Inventors: Mark Ghinovker, Yoel Feler
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Publication number: 20230099105Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Publication number: 20230005777Abstract: Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Inventor: Mark Ghinovker
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Publication number: 20220413394Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413395Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220415725Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11537043Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.Type: GrantFiled: January 28, 2021Date of Patent: December 27, 2022Assignee: KLA-TENCOR CORPORATIONInventors: Yoel Feler, Vladimir Levinski, Roel Gronheid, Sharon Aharon, Evgeni Gurevich, Anna Golotsvan, Mark Ghinovker
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Patent number: 11532566Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.Type: GrantFiled: June 25, 2020Date of Patent: December 20, 2022Assignee: KLA CORPORATIONInventors: Roie Volkovich, Liran Yerushalmi, Raviv Yohanan, Mark Ghinovker
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Publication number: 20220357674Abstract: An overlay metrology system may include an overlay metrology tool suitable for measurement of an overlay target on a sample, the overlay target including one or more grating structures with patterned features distributed along one or more measurement directions. The overlay metrology tool may include an objective lens and an illumination pathway to illuminate the overlay target with two or more oblique illumination lobes distributed among one or more illumination distributions such that, for each of the measurement directions, diffraction orders of the one or more illumination distributions by the overlay target that are collected by the objective lens exclusively include a 0-order diffraction lobe and a single first-order diffraction lobe from at least one of the two or more illumination lobes. The overlay metrology tool may further include at least one detector to image the sample and a controller to generate overlay measurements based on the images.Type: ApplicationFiled: March 1, 2022Publication date: November 10, 2022Inventors: Andrew V. Hill, Yoel Feler, Amnon Manassen, Mark Ghinovker, Yonatan Vaknin
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Patent number: 11476144Abstract: Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.Type: GrantFiled: September 30, 2019Date of Patent: October 18, 2022Assignee: KLA CORPORATIONInventor: Mark Ghinovker