Patents by Inventor Mark Goorsky
Mark Goorsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352541Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, Jr.
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Publication number: 20230352571Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AIN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, JR.
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Patent number: 11634834Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: GrantFiled: August 24, 2021Date of Patent: April 25, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Publication number: 20210381127Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: ApplicationFiled: August 24, 2021Publication date: December 9, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, JR., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Patent number: 11131039Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: GrantFiled: May 23, 2019Date of Patent: September 28, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Publication number: 20190360117Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: ApplicationFiled: May 23, 2019Publication date: November 28, 2019Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Sam Graham, JR., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Patent number: 9196703Abstract: A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.Type: GrantFiled: August 20, 2014Date of Patent: November 24, 2015Assignees: Northrop Grumman Systems Corporation, The United States of America, as Represented by the Secretary of the Navy, The Regents of the University of CaliforniaInventors: Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell, Andrew D. Koehler, Bradford B. Pate, Marko J. Tadjer, Rajinder S. Sandhu, Vincent Gambin, Gregory Lewis, Ioulia Smorchkova, Mark Goorsky, Jeff McKay
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Publication number: 20150056763Abstract: A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.Type: ApplicationFiled: August 20, 2014Publication date: February 26, 2015Inventors: Karl D. Hobart, Tatyana I. Feygelson, Eugene A. Imhoff, Travis J. Anderson, Joshua D. Caldwell, Andrew D. Koehler, Bradford B. Pate, Marko J. Tadjer, Randijer S. Sandhu, Vincent Gambin, Gregory Lewis, Ioulia Smorchkova, Mark Goorsky, Jeff McKay