Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.

Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.

Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.

Abstract: An integrated circuit comprising a subassembly of solid state devices formed into a substrate made of a semiconducting material. The devices within the subassembly are connected by metal wiring formed from conductive metals. A diffusion barrier layer of an alloy film having the composition of SiwCxOyHz where w has a value of 10 to 33, preferably 18 to 20 atomic %, x has a value of 1 to 66, preferably 18 to 21 atomic percent, y has a value of 1 to 66, preferably 5 to 38 atomic % and z has a value of 0.1 to 60, preferably 25 to 32 atomic %; and w+x+y+z=100 atomic % is formed on at least the metal wiring.

Abstract: Disclosed is a method for making an air bridge in an electronic device. This method uses amorphous silicon carbide to protect electrical conductors in the device during formation of the bridge. The silicon carbide also provides hermetic and physical protection to the device after formation.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

Abstract: This invention pertains to a method of forming a coating on an electronic substrate and to the electronic substrates coated thereby. The method comprises applying on the electronic substrate a coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 where R is selected from the group consisting of an alkyl radical having from 1 to 3 carbon atoms, the vinyl radical, the 3,3,3-trifluoropropyl radical, the gamma-glycidoxypropyl radical and the gamma-methacryloxypropyl radical with the provision that at least 70% of the R radicals are methyl, and thereafter ceramifying the coating by heating at a temperature of about 200.degree. C. to 1000.degree. C. The use of the coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 allows for the formation of thick planarizing coatings on the electronic substrate.

Abstract: Silica-containing ceramic coatings are produced on substrates at low temperatures by applying a coating comprising a silica precursor on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the silica precursor to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.

Abstract: Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.

Abstract: A semiconductor integrated circuit (IC) die is made with enhanced resilience to handling, testing, and storage, associated with its qualification and distribution as a KNOWN GOOD DIE (KGD). The IC device has a mechanically tough and chemically inert top layer to protect it from damage. The device contacts are made of thin film metals which facilitate reversible electrical connections used in KGD testing. The overall contact structure protects the device from irreversible damage during the connection, test, and disconnection sequence.