Abstract: A power amplifier circuit (40) that includes an error correction loop (44) having a lower IP3 error correction amplifier (54) than a main power amplifier (46) in a main signal path (48). A first attenuator (52) in the error loop (44) attenuates the RF signal, and provides more attenuation of intermodulation products in the RF signal and about the same attenuation for a main frequency of the RF signal for each dB of attenuation. The error amplifier (54) amplifies the attenuated RF signal from the first attenuator (52). A second attenuator (56) in the error loop (44) attenuates the RF signal from the error correction amplifier (54). A phase shifter (58) phase shifts the RF signal from the second attenuator (56). A coupler (50) couples the amplified RF signal and the phase shifted RF signal to cancel out intermodulation products in the amplified RF signal.

Abstract: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

Abstract: A three dimensional (3D) microwave monolithic integrated circuit (MMIC) multi-push voltage controlled oscillator (VCO) and methods of making the same is provided. The 3D MMIC multi-push oscillator includes a plurality of matching frequency oscillators coupled to a phasing ring in substantially equidistantly spaced apart locations. A combined VCO output signal is provided at a central output connection point of the phasing ring. The central output connection point resides on a first plane. An output conductor transition has a first end coupled to the central output connection point and a second end provided as an output to the quad-push VCO. The output conductor transition extends transverse to the first plane and terminates at a second plane separated from the first plane. The multi-push oscillator can be a push-push, quad-push or N-push type VCO based on a particular implementation.

Abstract: Protection against x-ray radiation is provided by a thin layer of a zinc-based alloy. An electronics component housing and lid are made to include a base of a lightweight alloy, a thin coating of the zinc-based alloy and an exterior finish metal layer. The zinc-based alloy provides excellent radiation protection and other advantages, without a significant weight penalty.

Abstract: An LC filter structure and method for its fabrication, in which multiple shunt capacitors, multiple shunt inductors and multiple coupling inductors are printed on a metal layer formed on a thin dielectric substrate. The capacitors have first electrodes that are formed as spatially separated regions of the metal layer, and a common second electrode formed by a ground plane on the substrate. The shunt inductors are formed as spiral traces connected to the separated regions and to the ground plane, through conductive vias. The coupling inductors are similarly formed as spiral traces in the gaps between the separated regions, the ends of each coupling inductor being connected to respective adjacent regions of the metal layer.

Abstract: A ferroelectric loaded waveguide resonator capable of operation at microwave, millimeter-wave and higher frequencies and suitable for integration into a three-dimensional monolithic microwave integrated circuit (3D MMIC) is disclosed. The resonator includes a resonator cavity, which, in one form of the invention, is formed by two parallel metal layers and a metallized wall structure extending between the metal layers. The cavity is filled with dielectric material and includes a layer of ferroelectric material, which is used to control the resonant frequency by varying a voltage bias applied to the ferroelectric layer. The cavity includes a slot in one of the metal layers and a coupling strip formed adjacent to the slot to provide electromagnetic coupling to other components, such as a voltage controlled oscillator (VCO). The invention can also be applied to other multi-metal semiconductor or wafer level packaging technologies.

Abstract: A three dimensional (3D) microwave monolithic integrated circuit (MMIC) multi-push voltage controlled oscillator (VCO) and methods of making the same is provided. The 3D MMIC multi-push oscillator includes a plurality of matching frequency oscillators coupled to a phasing ring in substantially equidistantly spaced apart locations. A combined VCO output signal is provided at a central output connection point of the phasing ring. The central output connection point resides on a first plane. An output conductor transition has a first end coupled to the central output connection point and a second end provided as an output to the quad-push VCO. The output conductor transition extends transverse to the first plane and terminates at a second plane separated from the first plane. The multi-push oscillator can be a push-push, quad-push or N-push type VCO based on a particular implementation.

Abstract: A comb frequency generator that is tunable to vary the width of the pulses in the output signal and achieve a maximum power output at different harmonic frequencies. A wavefront compression device receives a sinusoidal input signal and provides wavefront compression to create a compressed signal having a series of periodic fast edges. A delay device receives the fast-edge compressed signal and delays the fast-edge signal to create a delayed fast-edge signal. A combining device receives the original fast-edge compressed signal and the delayed fast-edge compressed signal to generate an output signal including a series of pulses having a width determined by the delay of the delayed signal. In one embodiment, the delay device is a shorted transmission line stub having a length selectively set by a series of MEM devices. In another embodiment, the delay device is an NLTL variable time delay device that delays the fast-edge signal.

Abstract: A three dimensional (3D) monolithic integrated circuit (MMIC) balun and methods of making the same are provided. A primary spiral winding is spaced apart from a secondary primary winding by a gap in a substantially aligned stacked configuration forming a balun. The gap medium can be a low dielectric constant material if employing a multi-metal process or air if employing a wafer level packaging process.

Abstract: A technique for interconnecting monolithic microwave integrated circuits (MMICS) on a substrate, and a method for fabricating substrate sections that facilitate such interconnection. A MMIC is positioned in a gap in the substrate, on which are formed conventional microwave transmission lines for purposes of MMIC interconnection. On each side of the gap, the substrate is tapered in thickness between the normal substrate thickness and the much smaller thickness of the MMIC. The transmission lines in this transition region are tapered in width as the substrate is tapered in thickness, thereby maintaining uniform transmission line characteristics, particularly the characteristic impedance of the transmission line. Small connector ribbons provide electrical connection between the tapered transmission lines and the MMIC. A method is also disclosed for fabricating multiple substrate sections for use in the structure of the invention.

Abstract: Reflow soldering of a variety of circuit boards (9, 11, 15) in a variety of sizes and shapes to assigned locations on the base or carrier (13) of the electronic module housing (3) is simplified by eliminating custom made metal blocks previously used to clamp the circuit boards against the carrier metal. Instead, the solder-backed circuit boards are placed in assigned positions in the module housing and the inside volume of that housing is filled (22) with particulate, such as small beads (17), covering the circuit boards, but leaving the edges of the upstanding metal shields (5 and 7) visible. A plate (21) backed foam sheet (19) is placed over the module housing (24) and clamped down (26), pressing against the beads. The clamped assembly is then heated (28) to reflow the solder, soldering the circuit boards in place.

Abstract: A pulse generating circuit and related method, for producing extremely narrow pulses for use in monolithic microwave integrated circuits (MMICs) for radar, high-speed sampling, pulse radio and other applications. A sinusoidal input signal is supplied to two nonlinear shock wave generators, which are oppositely biased to produce periodic outputs that are mirror images of each other, one with a very steep rising edge and one with a very steep falling edge. The combined outputs would cancel each other completely but for the introduction of a slight time delay in one of them, which results in a narrow peak in the combined signals.

Abstract: A power amplifier circuit (40) that includes an error correction loop (44) having a lower IP3 error correction amplifier (54) than a main power amplifier (46) in a main signal path (48). A first attenuator (52) in the error loop (44) attenuates the RF signal, and provides more attenuation of intermodulation products in the RF signal and about the same attenuation for a main frequency of the RF signal for each dB of attenuation. The error amplifier (54) amplifies the attenuated RF signal from the first attenuator (52). A second attenuator (56) in the error loop (44) attenuates the RF signal from the error correction amplifier (54). A phase shifter (58) phase shifts the RF signal from the second attenuator (56). A coupler (50) couples the amplified RF signal and the phase shifted RF signal to cancel out intermodulation products in the amplified RF signal.

Abstract: A comb frequency generator that is tunable to vary the width of the pulses in the output signal and achieve a maximum power output at different harmonic frequencies. A wavefront compression device receives a sinusoidal input signal and provides wavefront compression to create a compressed signal having a series of periodic fast edges. A delay device receives the fast-edge compressed signal and delays the fast-edge signal to create a delayed fast-edge signal. A combining device receives the original fast-edge compressed signal and the delayed fast-edge compressed signal to generate an output signal including a series of pulses having a width determined by the delay of the delayed signal. In one embodiment, the delay device is a shorted transmission line stub having a length selectively set by a series of MEM devices. In another embodiment, the delay device is an NLTL variable time delay device that delays the fast-edge signal.

Abstract: A multi-carrier receiver system and method for receiving a transmission frequency multi-carrier signal include a feedforward cancellation loop. A frequency conversion circuit generates an intermediate frequency (IF) multi-carrier signal based on the transmission frequency multi-carrier signal. The feedforward cancellation loop generates an amplitude corrected multi-carrier signal based on the IF multi-carrier signal such that the amplitude corrected multi-carrier signal has a reduced dynamic range with respect to the IF multi-carrier signal. A primary A/D converter having a significantly lower dynamic range requirements can therefore generate a digital multi-carrier signal based on the amplitude corrected multi-carrier signal. The feedforward cancellation loop therefore enables the primary A/D converter to process multi-carrier signals without the need for large dynamic range requirements.

Abstract: An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).

Abstract: Various mixer topologies, configured to cancel various low order spurs. The mixer topologies each include a pair of mixers and a plurality of couplers. The couplers are configured to cancel specific spurs. As such, the mixer topology eliminates the need for band splitting thus allowing larger input frequency ranges and allows for simpler and less expensive filtering.

Abstract: An apparatus for converting a digital input signal to an analog signal for transmission. The input signal can include more than one carrier signal. A plurality of delta-sigma modulation loop circuits are connected in an increasing order of operating frequency so as to reduce a word length of the input signal. A tuning circuit adjusts the signal frequency to a transmitting frequency for conversion to analog by a digital-to-analog converter. A first loop circuit is implemented using CMOS gates, and a second loop circuit and the tuning circuit are implemented using indium phosphide gates. The apparatus allows a high-resolution, wide-band RF multiple-carrier signal to be re-quantized to a lower-resolution signal while an acceptable signal-to-noise ratio is maintained.

Abstract: An inexpensive package for a semiconductor chip (1) that incorporates a stress relief buffer (13) between a side of the chip and the metal carrier layer (2) to absorb thermally induced stress produced by significantly different rates of thermal expansion of the wafer and the metal carrier. The buffer (13) is formed by a polymer that is flexible and can be etched, contains a coefficient of thermal expansion that does not significantly differ from that of the chip and/or a combination of CET and elasticity that retains a physical connection with the side of the chip and the metal carrier over the temperature range of operation anticipated for the chip. Polyimide or paraylene are preferred examples. Vias (15) extend through the buffer to place the metal carrier electrically in common with the metal layer (5) found on the back surface of the wafer so that an electrical ground applied to the metal carrier layer (2) may extend through to that surface.

Abstract: A receiver (10) for a wireless telecommunications system that provides relatively wideband signal processing of received signals without increased signal distortion so that multiple received signals can be simultaneously processed. The receiver (10) includes a specialized LNA (16), frequency down-converter (18) and ADC (20) to perform the wideband signal processing while maintaining receiver performance. The frequency down-converter (18) employs a suitable mixer (28), BPA (32), attenuator (34), and transformer (36) that are tuned to provide the desired frequency down-conversion and amplitude control over the desired wideband. The down-converter devices are selected depending on the particular performance criteria of the ADC (20). A specialized digital channelizer (22) is included in the receiver (10) that receives the digital signal from the ADC (20), and separates the signals into the multiple channels.