Abstract: Aspects of the present disclosure are directed to apparatuses and methods involving nanowires having junctions therebetween. As consistent with one or more embodiments, an apparatus includes first and second sets of nanowires, in which the second set overlaps the first set. The apparatus further includes a plurality of nanowire joining recrystallization junctions, each junction including material from a nanowire of the first set that is recrystallized into an overlapping nanowire of the second set.

Abstract: Aspects of the present disclosure are directed to apparatuses and methods involving nanowires having junctions therebetween. As consistent with one or more embodiments, an apparatus includes first and second sets of nanowires, in which the second set overlaps the first set. The apparatus further includes a plurality of nanowire joining recrystallization junctions, each junction including material from a nanowire of the first set that is recrystallized into an overlapping nanowire of the second set.

Abstract: An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Abstract: A Raman-active nanoparticle is provided that includes a dish-shape plasmonically active metal base, and a plasmonically active metal pillar disposed on the plasmonically active metal base, where the plasmonically active metal pillar is disposed within the dish-shape plasmonically active metal base and normal to a bottom of the dish-shape plasmonically active metal base, where a circular gap is disposed between the dish-shape plasmonically active metal pillar and inner walls of the dish-shape plasmonically active metal base. In one embodiment a Raman-active nanoparticle is provided that includes a dish-shape base having a dielectric material, an electrically conductive layer disposed on the inner surface of the dish-shape base, and an electrically conductive pillar disposed on the conductive layer, and within the dish-shape and perpendicular to a bottom of the dish-shape base, where a circular gap is disposed between the conductive pillar and inner walls of the dish-shape base.

Abstract: Patterning planar photo-absorbing materials into arrays of nanowires is demonstrated as a method for increasing the total photon absorption in a given thickness of absorbing material. Such a method can provide faster, cheaper, and more efficient photo-detectors and solar cells. A thin nanowire can absorb many more photons than expected from the size of the nanowire. The reason for this effect is that such nanowires support cylindrical particle resonances which can collect photons from an area larger than the physical cross-section of the wire. These resonances are sometimes referred to as Mie resonances or Leaky Mode Resonances (LMRs). The nanowires can have various cross section shapes, such as square, circle, rectangle, triangle, etc.

Abstract: A Raman-active nanoparticle is provided that includes a dish-shape plasmonically active metal base, and a plasmonically active metal pillar disposed on the plasmonically active metal base, where the plasmonically active metal pillar is disposed within the dish-shape plasmonically active metal base and normal to a bottom of the dish-shape plasmonically active metal base, where a circular gap is disposed between the dish-shape plasmonically active metal pillar and inner walls of the dish-shape plasmonically active metal base. In one embodiment a Raman-active nanoparticle is provided that includes a dish-shape base having a dielectric material, an electrically conductive layer disposed on the inner surface of the dish-shape base, and an electrically conductive pillar disposed on the conductive layer, and within the dish-shape and perpendicular to a bottom of the dish-shape base, where a circular gap is disposed between the conductive pillar and inner walls of the dish-shape base.

Abstract: An optical device includes an optically emitting material producing spontaneous emission and an optical waveguide coupled to the optically emitting material. The spontaneous emission from the optically emitting material is emitted into at least one optical mode of the optical waveguide. The optical waveguide coupled to the optically emitting material does not provide optical gain, and the presence of the optical waveguide causes the spontaneous emission rate to be substantially more rapid than in the absence of the optical waveguide. The optical waveguide causes the more rapid spontaneous emission rate over a broad range of frequencies.

Abstract: An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Abstract: An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Abstract: Dimensional parameters of metal-containing structures such as films, interconnects, wires and stripes, and nanoparticles are detected using an approach involving plasmon-excitation and one or more metal-constituency characteristics of the metal-containing structures. According to an example embodiment of the present invention, plasmon-exciting light is used to excite plasmons in a structure, the plasmon excitation being responsive to the metal constituency. A characteristic of light reflected from the structure is then used to detect dimensional parameters of the structure. In one implementation, a characteristic of the reflected light that is related to the state of plasmon excitation in the structure is used to detect the dimensional parameters. In another implementation, the angle of incidence of the plasmon-exciting light is used in connection with an intensity-related characteristic of light reflected from structure to detect one or more dimensions of the structure.

Abstract: An optoelectronic device and method utilizing nanometer-scale particles arranged along a preselected path, each particle being capable of polarization. The particles are spaced apart such that polarization of one of the particles acts to induce polarization in adjacent particles, enabling electromagnetic energy to be transferred, modulated, filtered or otherwise processed by the device. In a specific embodiment, a chain of such particles may be arranged in a configuration having a variety of different angles, sharp corners and junctions, without adversely affecting device efficiency.