Abstract: A method for updating communication parameters on a mobile device, the method including sending a communication from the mobile device to a server, the communication including a location of the mobile device; receiving at the mobile device, responsive to the communication, a new communication parameter; reconfiguring the mobile device with the new communication parameter; and sending a second communication from the mobile device to the server, the second communication using the new communication parameter.

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cm3 or greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25° C. to about 400° C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Abstract: High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Abstract: A gas turbine engine having a damping system that includes features for optimizing the damping response to vibrational loads on a rotary component for a wide range of operational conditions is provided. In one aspect, the damping system includes a damper control valve. The damper control valve receives working fluid from a working fluid supply and has a valve plunger movable between a first position and a second position. When the valve plunger is in the first position, the damper control valve permits working fluid to flow to a first damper associated with a first bearing coupled with the rotary component and to a second damper associated with a second bearing coupled with the rotary component. When the valve plunger is in the second position, the damper control valve permits working fluid to flow to the first damper but not the second damper.

Abstract: The invention relates to the field of medicine, specifically to the field of treatment of rosacea. The invention relates to a novel composition and a novel kit of parts, both comprising a vasoconstrictive compound and a compound specifically targeting a bacterial cell, preferably a gram positive bacterial cell. The invention further relates to said composition and/or kit of parts for medical use, preferably for treating an individual suffering from rosacea.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems are used to polish low-k or ultra-low-k films with reasonable high removal rates while to polish oxide and nitride films with relative low removal rates. The compositions use 5 abrasive, chemical additives to boost low-k or ultra-low-k film removal rates and suppress oxide and nitride film removal rates for achieving high selectivity, such as low-: TEOS, ultra-low-K: TEOS, and low-k: SiN or ultra-low-k: SiN.

Abstract: The invention relates to the field of medicine, specifically to the field of treatment of dermatitis or eczema, even more specifically to the field of treatment of atopic dermatitis. The invention relates to a novel composition and a novel kit of parts, both comprising an anti-inflammatory compound and a compound specifically targeting a bacterial cell, preferably a gram positive bacterial cell. The invention further relates to said composition and/or kit of parts for medical use, preferably for treating an individual suffering from eczema.

Abstract: An automotive head restraint apparatus includes a housing having a padded and upholstered exterior, the housing being rotatable about a lateral support tube that supports a lock plate having a lobe extending radially with a detent slot extending therein. A latch finger extends from a pivotable lock lever plate to releasably engage in the detent slot to latch the housing in the deployed position. A pull rod is secured to the lock lever plate, and is connected to a release lever arm at its other end. A shape memory alloy (SMA) wire loop is passed about a drive pulley that is supported by a reciprocally translatable slide. A drive arm extends from the slide to impinge on the release lever and raise the pull rod when the SMA wire loop is energized and contracted, thereby releasing the latch finger to rotate the housing to the retracted position.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.

Abstract: In accordance with a first aspect of the present disclosure, a system is provided for applying patches to executable codes, comprising: a plurality of execution environments configured to execute said codes in different execution contexts; a control unit configured to apply the patches to said codes; wherein the control unit is configured to apply a specific patch to a specific code upon or after an execution environment configured to execute said specific code switches to an execution context corresponding to said specific code. In accordance with other aspects of the present disclosure, a corresponding method is conceived for applying patches to executable codes, and a corresponding computer program is provided.

Abstract: A firearm suppressor is described herein. The firearm suppressor can include a proximal end, a distal end, and a cylindrical body positioned between the proximal end and the distal end. The cylindrical body of the firearm suppressor can include one or more chambers and one or more chamber separators. The distal end can include spiral vanes and exhaust openings that can generate rotational force on the firearm suppressor by redirecting flow of gases exiting the firearm suppressor. The chambers can house a lattice structure in a form of lattice that can split sound waves, pressure waves, and quickly dissipate heat generated within the firearm suppressor.