Abstract: A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

Abstract: A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

Abstract: A method of making a functionalized device for amplification or multiplication of electrons includes making a glass channel array by a laser-induced deep etching process including (1) applying laser pulses to a glass substrate to form an array of modified areas, the glass substrate having a thickness less than 5 mm, the modified areas extending between two surfaces of the glass substrate, and (2) subsequently performing an etching process to selectively remove the modified areas and thereby form an array of through channels. Subsequently, one or more materials are deposited on the glass channel array to form the functionalized device.