Patents by Inventor Mark R. Skokan
Mark R. Skokan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9541450Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: GrantFiled: October 19, 2015Date of Patent: January 10, 2017Assignee: DRS Network & Imaging Systems, LLCInventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Publication number: 20160069740Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: ApplicationFiled: October 19, 2015Publication date: March 10, 2016Inventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Patent number: 9209346Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: GrantFiled: May 23, 2014Date of Patent: December 8, 2015Assignee: DRS Network & Imaging Systems, LLCInventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Publication number: 20140342493Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: ApplicationFiled: May 23, 2014Publication date: November 20, 2014Applicant: DRS RSTA, Inc.Inventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Patent number: 8772717Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: GrantFiled: August 9, 2010Date of Patent: July 8, 2014Assignee: DRS RSTA, Inc.Inventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Publication number: 20110031401Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.Type: ApplicationFiled: August 9, 2010Publication date: February 10, 2011Applicant: DRS RSTA, INCInventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
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Patent number: 6596982Abstract: A reflection suppression system for suppressing reflection from scanned infrared focal plane arrays using a system of two or more blazed diffraction gratings in the path of radiations to the array.Type: GrantFiled: December 9, 1992Date of Patent: July 22, 2003Assignee: Raytheon CompanyInventors: Mark R. Skokan, Howard V. Kennedy
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Patent number: 5834775Abstract: A method of fabricating a focal plane array and the array having a integral slot shield which comprises fabricating a focal plane array having a plurality of detector elements. A layer of electrically insulating material having a planar top surface is then formed over the array. A reflective layer is then formed over the layer of electrically insulating material and the electrically insulating layer and reflective layer are etched only in the regions thereof over the detector elements to form slots over the detector elements. An absorbing layer is formed over the reflective layer. The absorbing layer is preferably an infrared-transparent dielectric having an optical thickness of about one quarter wavelength of the light frequency of interest with a metallic flash layer thereover having a thickness of from about 50 to about 60 Angstroms. The infrared dielectric is preferably one of zinc sulfide, zinc selenide, polyethylene and paraxylilene.Type: GrantFiled: December 17, 1996Date of Patent: November 10, 1998Assignee: Raytheon TI Systems, Inc.Inventors: Mark R. Skokan, John C. Ehmke, Charles A. Franda, Stephen L. Whicker