Abstract: A method of removing a backing layer from a panel, made of an uncured pre-impregnated fiber-reinforced polymer, comprises a step of orienting the panel into a backing-separation orientation relative to an edge-engagement tool. The method also comprises a step of positioning the panel into a backing-separation position relative to the edge-engagement tool. The method further comprises a step of moving the edge-engagement tool, when the panel is in the backing-separation orientation and the backing-separation position, so that backing-engagement features of the edge-engagement tool engage the backing layer, at only an edge portion of the backing layer, and just the edge portion of the backing layer separates from the panel. The method additionally comprises a step of gripping the edge portion of the backing layer, and, when gripped, moving the backing layer relative to the panel so that an entirety of the backing layer separates from the panel.

Abstract: Methods and apparatus for immersion cooling systems are disclosed herein. An example apparatus includes a base plate, fins extending from the base plate, a tube extending along an axis through the fins, the tube including an inlet, and a slot extending along the axis, the inlet, the slot, and the fins sequentially defining a flow pathway.

Abstract: A method for generating magnetic resonance (MR) images of a kidney region or a brain of a subject using multinuclear magnetic resonance imaging MRI includes performing, using an MRI system, an Na-nuclei pulse sequence module to acquire a portion of a first set of MR data from the kidney or brain region of the subject and performing, using the MRI system, an H-nuclei pulse sequence module to acquire a portion of a second set of MR data from the kidney or brain region of the subject. The Na-nuclei pulse sequence module and the H-nuclei pulse sequence module may be repeated in an interleaved manner until acquisition of the first set of MR data and the second set of MR data are complete. The method further includes generating at least one Na-based image using the first set of MR data, generating at least one H-based image using the second set of MR data and displaying one or more of the at least one Na-based image and the at least one H-based image on a display.

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

Abstract: An apparatus for managing buffers and a method thereof are provided. The method for managing buffers includes: receiving a plurality of pieces of data, where the plurality of pieces of data includes a first piece of data and a second piece of data; allocating at least one buffer to establish a cluster buffer according to a data amount of the first piece of data; and if at least one of a first condition and a second condition is satisfied, ending a storage operation of the cluster buffer, where the first condition is that a total remaining space of the at least one buffer that has stored the data in the cluster buffer is less than a remaining space threshold, and the second condition is that the quantity of the at least one buffer that has stored the data in the cluster buffer reaches a cluster threshold.

Abstract: A test structure for measuring static noise margin (SNM) for one or more static random access memory (SRAM) cells can include a first transistor gate (TG) and a second TG electrically coupled to each SRAM cell. In an implementation, an interconnect between an output of a first inverter and an input of a second inverter of the SRAM cell can be electrically disconnected using a cut off. During operation of the SRAM cell, internal storage nodes within the SRAM cell can be electrically coupled through the first TG and the second TG to, for example, external pins and to a test fixture. Electrical parameters such as voltage can be measured at the internal storage nodes through the external pins and used to calculate SNM of the SRAM cell.

Abstract: A test structure for measuring static noise margin (SNM) for one or more static random access memory (SRAM) cells can include a first transistor gate (TG) and a second TG electrically coupled to each SRAM cell. In an implementation, an interconnect between an output of a first inverter and an input of a second inverter of the SRAM cell can be electrically disconnected using a cut off. During operation of the SRAM cell, internal storage nodes within the SRAM cell can be electrically coupled through the first TG and the second TG to, for example, external pins and to a test fixture. Electrical parameters such as voltage can be measured at the internal storage nodes through the external pins and used to calculate SNM of the SRAM cell.