Patents by Inventor Marko Vehkamaki

Marko Vehkamaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing oxide films
    Patent number: 9169557
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: October 27, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
  • Metal oxide films
    Patent number: 8685165
    Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: April 1, 2014
    Assignee: ASM International N.V.
    Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
  • PROCESS FOR PRODUCING OXIDE FILMS
    Publication number: 20100285217
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Application
    Filed: May 10, 2010
    Publication date: November 11, 2010
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
  • Process for producing oxide films
    Patent number: 7713584
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: May 11, 2010
    Assignee: ASM International N.V.
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
  • Process for producing bismuth-containing oxide films
    Patent number: 7618681
    Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: November 17, 2009
    Assignee: ASM International N.V.
    Inventors: Marko Vehkamäki, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • METAL OXIDE FILMS
    Publication number: 20080072819
    Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
    Type: Application
    Filed: September 28, 2007
    Publication date: March 27, 2008
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
  • Process for producing oxide films
    Publication number: 20070148347
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Application
    Filed: December 22, 2005
    Publication date: June 28, 2007
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
  • Oxide films containing titanium
    Publication number: 20060219157
    Abstract: Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
    Type: Application
    Filed: December 22, 2005
    Publication date: October 5, 2006
    Inventors: Antti Rahtu, Raija Matero, Markku Leskela, Mikko Ritala, Timo Hatanpaa, Timo Hanninen, Marko Vehkamaki
  • Method for growing oxide thin films containing barium and strontium
    Patent number: 7108747
    Abstract: The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A thin film made by means of the invention has a high permittivity and excellent conformality.
    Type: Grant
    Filed: September 13, 1999
    Date of Patent: September 19, 2006
    Assignee: ASM International N.V.
    Inventors: Markku Leskelä, Mikko Ritala, Timo Hatanpää, Timo Hänninen, Marko Vehkamäki
  • Process for producing oxide films
    Publication number: 20050089632
    Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.
    Type: Application
    Filed: October 28, 2003
    Publication date: April 28, 2005
    Inventors: Marko Vehkamaki, Timo Hatanpaa, Mikko Ritala, Markku Leskela