Abstract: The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.

Abstract: The invention relates to a radiation detector (10), in particular for detecting x-ray radiation, comprising a carrier substrate (11), a detector layer (12) which comprises GaN, is arranged on the carrier substrate (11) and has a thickness less than 50 ?m, and contact electrodes (13) which form ohmic contacts with the detector layer (12). The invention also relates to a measurement device which is equipped with at least one such radiation detector (10).

Abstract: A method for detecting radiation during the examination of a sample (1) comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (10), passing the radiation through the sample (1), and detecting the radiation by means of at least one photoelectric solid-state detector (20) containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector (20) is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (2DEG). A setting of the radiation is provided in such a way that the solid-state detector (20) is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section.

Abstract: The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrier substrate (11), and has a thickness of less than 50 ?m. The contact electrodes (13) form ohmic contacts with the detector layer (12). The X-ray camera also comprises a retaining device (20) on which the radiation detectors (10) are arranged along a specified reference line or reference surface (21). The invention also relates to a method for capturing an image of an object (2, 3) being examined using X-rays (1), said X-ray camera (100) being used in the method.

Abstract: A method for detecting radiation during the examination of a sample (1) comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (10), passing the radiation through the sample (1), and detecting the radiation by means of at least one photoelectric solid-state detector (20) containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector (20) is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (2DEG). A setting of the radiation is provided in such a way that the solid-state detector (20) is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section.

Abstract: The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrier substrate (11), and has a thickness of less than 50 ?m. The contact electrodes (13) form ohmic contacts with the detector layer (12). The X-ray camera also comprises a retaining device (20) on which the radiation detectors (10) are arranged along a specified reference line or reference surface (21). The invention also relates to a method for capturing an image of an object (2, 3) being examined using X-rays (1), said X-ray camera (100) being used in the method.

Abstract: The invention relates to a radiation detector (10), in particular for detecting x-ray radiation, comprising a carrier substrate (11), a detector layer (12) which comprises GaN, is arranged on the carrier substrate (11) and has a thickness less than 50 ?m, and contact electrodes (13) which form ohmic contacts with the detector layer (12). The invention also relates to a measurement device which is equipped with at least one such radiation detector (10).

Abstract: The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.