Abstract: A LIDAR system for ranging an object using primary and secondary light reflected at the object, includes a laser, arranged to emit the primary light along a transmit beam towards a scanning element of the system, wherein at least a part of the transmit beam adjacent to the scanning element defines a center line, a detector, arranged to detect the secondary light along a receive beam, wherein the receive beam includes a first part aligned with the center line and a second part having an inclination with respect to the center line, wherein the second part of the receive beam is in-between the first part and the detector, and a segmented lens, positioned on the center line in-between the first part of the receive beam and the second part of the receive beam, wherein the receive lens segment is designed to focus the receive beam onto the detector.

Abstract: A scan unit (100) includes a base (141) and an elastic mount (111) having a first end (111A) and a second end (111B). The first end (111A) is coupled to the base (141), the second end (111B) being configured to couple to a mirror (150). The scan unit (100) also includes at least one interface element (146) configured to couple to one or more actuators (172, 310, 320). The scan unit (100) further includes at least one elastic coupling (400-404) arranged in-between the base (141) and the at least one interface element (146) and configured to deflect the base (141) upon actuation of the one or more actuators (172, 310, 320). The at least one elastic coupling (400-404) is integrally formed with at least a part (141A) of the base (141) and the at least one interface element (146).

Abstract: An IC that includes a contiguous standard cell area with a 4x3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: A LIDAR system for ranging an object using primary and secondary light reflected at the object, includes a laser, arranged to emit the primary light along a transmit beam towards a scanning element of the system, wherein at least a part of the transmit beam adjacent to the scanning element defines a center line, a detector, arranged to detect the secondary light along a receive beam, wherein the receive beam includes a first part aligned with the center line and a second part having an inclination with respect to the center line, wherein the second part of the receive beam is in-between the first part and the detector, and a segmented lens, positioned on the center line in-between the first part of the receive beam and the second part of the receive beam, wherein the receive lens segment is designed to focus the receive beam onto the detector.

Abstract: An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: An IC that includes a contiguous standard cell area with a 4×3 e-beam pad that is compatible with advanced manufacturing processes and an associated e-beam testable structure.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas.

Abstract: An IC includes a contiguous standard cell area with first, second, and third TS-GATE-short-configured test area geometries disposed therein. In some embodiments, the contiguous standard cell area may further include: fourth and fifth TS-GATE-short-configured test area geometries, and/or other test area geometries, such as tip-to-tip-short, tip-to-side-short, diagonal-short, corner-short, interlayer-overlap-short, via-chamfer-short, merged-via-short, snake-open, stitch-open, via-open, or metal-island-open.

Abstract: Improved processes for manufacturing wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements (“NCEM”) of fill cells that contain structures configured target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes. Such processes may involve evaluating Designs of Experiments (“DOEs”), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with a moving stage and beam deflection to account for motion of the stage.

Abstract: An IC includes first and second designs of experiments (DOES), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The first DOE contains fill cells configured to enable non-contact (NC) detection of tip-to-side shorts, and the second DOE contains fill cells configured to enable NC detection of corner shorts.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and corner short test areas.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areas.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side-to-side short, and via open test areas.

Abstract: A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three electrically connected, parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage.