Patents by Inventor Martijn Maria ZAAL
Martijn Maria ZAAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11710668Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: GrantFiled: October 16, 2020Date of Patent: July 25, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
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Patent number: 11604419Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.Type: GrantFiled: April 27, 2021Date of Patent: March 14, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Joannes Jitse Venselaar, Anagnostis Tsiatmas, Samee Ur Rehman, Paul Christiaan Hinnen, Jean-Pierre Agnes Henricus Marie Vaessen, Nicolas Mauricio Weiss, Gonzalo Roberto Sanguinetti, Thomai Zacharopoulou, Martijn Maria Zaal
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Publication number: 20210255552Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.Type: ApplicationFiled: April 27, 2021Publication date: August 19, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Joannes Jitse VENSELAAR, Anagnostis TSIATMAS, Samee Ur REHMAN, Paul Christiaan HINNEN, Jean-Pierre Agnes Henricus Marie VAESSEN, Nicolas Mauricio WEISS, Gonzalo Roberto SANGUINETTI, Thomai ZACHAROPOULOU, Martijn Maria ZAAL
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Patent number: 11022897Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.Type: GrantFiled: November 19, 2018Date of Patent: June 1, 2021Assignee: ASML Netherlands B.V.Inventors: Joannes Jitse Venselaar, Anagnostis Tsiatmas, Samee Ur Rehman, Paul Christiaan Hinnen, Jean-Pierre Agnes Henricus Marie Vaessen, Nicolas Mauricio Weiss, Gonzalo Roberto Sanguinetti, Thomai Zacharopoulou, Martijn Maria Zaal
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Publication number: 20210035871Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: ApplicationFiled: October 16, 2020Publication date: February 4, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard Mc NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Maria Isabel DE LA FUENTE VALENTIN, Koen VAN WITTEVEEN, Martijn Maria ZAAL, Shu-jin WANG
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Patent number: 10811323Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: GrantFiled: February 28, 2017Date of Patent: October 20, 2020Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Maria Isabel De La Fuente Valentin, Koen Van Witteveen, Martijn Maria Zaal, Shu-jin Wang
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Patent number: 10585354Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.Type: GrantFiled: January 24, 2019Date of Patent: March 10, 2020Assignee: ASML Netherlands B.V.Inventors: Anagnostis Tsiatmas, Joannes Jitse Venselaar, Samee Ur Rehman, Mariya Vyacheslavivna Medvedyeva, Bastiaan Onne Fagginger Auer, Martijn Maria Zaal, Thaleia Kontoroupi
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Patent number: 10520830Abstract: A method is described herein including applying, by a metrology apparatus, an incident radiation beam to a substrate including first features on a first layer and second features on a second layer, a relationship between the first and second features being characterized by a parameter of interest having a first value, wherein the metrology apparatus is operated in accordance with at least one characteristic having a first setting; receiving intensity data representing intensity of a portion of the incident radiation beam scattered by the first and second features; determining, based on the intensity data, a second value of the parameter of interest; and applying one or more adjustments to the at least one characteristic such that the at least one characteristic has a second setting different from the first, the one or more adjustments being determined based on a difference between the first value and the second value.Type: GrantFiled: December 14, 2018Date of Patent: December 31, 2019Assignee: ASML Netherlands B.V.Inventors: Harm Hubertus Joseph Elizabeth Kicken, Martijn Maria Zaal
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Publication number: 20190243253Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.Type: ApplicationFiled: January 24, 2019Publication date: August 8, 2019Inventors: Anagnostis TSIATMAS, Joannes Jitse Venselaar, Samee Ur Rehman, Mariya Vyacheslavivna Medvedyeva, Bastiaan Onne Fagginger Auer, Martijn Maria Zaal, Thaleia Kontoroupi
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Publication number: 20190204755Abstract: A method is described herein including applying, by a metrology apparatus, an incident radiation beam to a substrate including first features on a first layer and second features on a second layer, a relationship between the first and second features being characterized by a parameter of interest having a first value, wherein the metrology apparatus is operated in accordance with at least one characteristic having a first setting; receiving intensity data representing intensity of a portion of the incident radiation beam scattered by the first and second features; determining, based on the intensity data, a second value of the parameter of interest; and applying one or more adjustments to the at least one characteristic such that the at least one characteristic has a second setting different from the first, the one or more adjustments being determined based on a difference between the first value and the second value.Type: ApplicationFiled: December 14, 2018Publication date: July 4, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Harm Hubertus Joseph Elizabeth KICKEN, Martijn Maria ZAAL
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Publication number: 20190171115Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.Type: ApplicationFiled: November 19, 2018Publication date: June 6, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Joannes Jitse VENSELAAR, Anagnostis Tsiatmas, Samee Ur Rehman, Paul Christiaan Hinnen, Jean-Pierre Agnes Henricus Marie Vaessen, Nicolas Mauricio Weiss, Gonzalo Roberto Sanguinetti, Thomai Zacharopoulou, Martijn Maria Zaal
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Publication number: 20170255112Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.Type: ApplicationFiled: February 28, 2017Publication date: September 7, 2017Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard McNAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Maria Isabel DE LA FUENTE VALENTIN, Koen VAN WITTEVEEN, Martijn Maria ZAAL, Shu-jin WANG