Patents by Inventor Martin Binns

Martin Binns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control of thermal donor formation in high resistivity CZ silicon
    Publication number: 20050158969
    Abstract: The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect resistivity upon being subjected to a conventional semiconductor device manufacturing process. The present invention further directed to a silicon on insulator structure derived from such a wafer.
    Type: Application
    Filed: March 17, 2005
    Publication date: July 21, 2005
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Martin Binns, Robert Falster, Jeffrey Libbert