Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: An optical system for a display having a combiner (1) with a non-conformal reflection hologram and in which an intermediate image (II) of a display source is formed at a location in the light path to and spaced from the combiner (1), the system comprising at least one diffractive element (5,7) disposed in the light path between the display source (2) and the intermediate image (II) and arranged to counter, at least partially, the chromatic dispersion of the non-conformal reflection hologram (1).