Abstract: A method of forming a mold insert used to produce an intraocular lens (IOL) mold is disclosed herein. The method includes providing stock material and cutting the stock material, which includes multiple cutting steps. The cutting steps are performed on transitional regions of supporting portions of the mold insert. Peripheral surfaces of the mold insert have varying roughness values, and supporting portions of the mold insert have a greater roughness than the optical portion of the mold insert. An IOL is also disclosed herein that is formed using an IOL mold that is injection molded using the mold insert. A method of forming the IOL is also disclosed herein.

Abstract: A method and assembly for removing an intraocular lens from an injection molded mold half. With the method and the assembly, first spill ring material is removed from the mold half. Subsequently, the mold/lens-assembly is subjected to an oscillating mechanical load without substantial deformation of at least a part of the mold half that is in direct contact with the lens body. The oscillating mechanical load has an oscillation frequency which is in a range that excites the mold/lens-assembly to break bonds between the intraocular lens and the mold half. After that, a static mechanical push force is exerted on the bottom side of the mold half to at least partly separate the intraocular lens from the mold half.

Abstract: A method of forming a mold insert used to produce an intraocular lens (IOL) mold is disclosed herein. The method includes providing stock material and cutting the stock material, which includes multiple cutting steps. The cutting steps are performed on transitional regions of supporting portions of the mold insert. Peripheral surfaces of the mold insert have varying roughness values, and supporting portions of the mold insert have a greater roughness than the optical portion of the mold insert. An IOL is also disclosed herein that is formed using an IOL mold that is injection molded using the mold insert. A method of forming the IOL is also disclosed herein.

Abstract: A system and method for efficiently modifying the surface of an intraocular lenses to reduce tackiness and improve lens unfold time and unfold time consistency, and a product created using the system and method, is disclosed. In some embodiments, the system and method utilizes at least part of a lens-forming device as a mask.

Abstract: The present disclosure concerns a photovoltaic sandwich panel (1) comprising a photovoltaic element layer (2) provided between a protective front layer (3), and a fiber reinforced back layer (4), wherein: the protective front layer is formed from a compound comprising a first thermoplastic polymer (PI); and the fiber reinforced back layer comprises a second thermoplastic polymer (P2) with a fibrous filler material (F). The disclosure further concerns a method for manufacturing a photovoltaic sandwich panel and an assembly of said panels.

Abstract: Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

Abstract: Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

Abstract: A cascade source provided with a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel, wherein one cathode is provided per plasma channel, which cathode comprises an electrode which is adjustable relative to the cathode housing in the direction of the plasma channel, wherein the clamping provision is preferably of the collet chuck type. Also described is method for controlling the cascade source in use.

Abstract: A method for manufacturing a photovoltaic cell, such as a solar cell is disclosed. The method includes: providing a silicon substrate; applying to a side of the silicon substrate, a first layer of a metal with a relatively high optical reflectance, such as a layer of silver; applying to the first layer, a second layer of a metal with a relatively high electrical conductivity coefficient, such as a layer of aluminum or an Al alloy; and then firing the substrate having the first and second layers in order to obtain an alloy of the metals of the first and second layers and the silicon, wherein the alloy formed comprises a maximum amount of metal dissolved in the silicon in amounts up to the eutectic point of the alloy. In one implementation, the alloy is substantially an n-type Si—Al—Ag alloy. Thus, an improved Back Surface Field is formed in the substrate. The invention further relates to a photo voltaic cell obtained with the aid of such method.

Abstract: A method for treating a surface of at least one substrate, wherein the at least one substrate is placed in a process chamber, wherein the pressure in the process chamber is relatively low, wherein a plasma is generated by at least one plasma source, wherein, during the treatment, at least one plasma source (3) and/or at least one optionally provided treatment fluid supply source is moved relative to the substrate surface. The invention further provides an apparatus for treating a surface of at least one substrate, wherein the apparatus is provided with a process chamber and at least one plasma source, wherein the at least one plasma source (3) and/or at least one optionally provided treatment fluid supply source is movably arranged.

Abstract: A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: —placing the substrate (1) in a process chamber (5); —maintaining the pressure in the process chamber (5) at a relatively low value; —maintaining the substrate (1) at a specific substrate treatment temperature; —generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a specific distance (L) from the substrate surface; —contacting at least a part of the plasma (P) generated by each source (3) with the said part of the substrate surface; and —supplying at least one precursor suitable for SiOx realization to the said part of the plasma (P); wherein at least the at least one layer realized on the substrate (1) in subjected to a temperature treatment in a gas environment.

Abstract: A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: the substrate (1) is placed in a processing chamber (5) which has specific internal processing chamber dimensions; the pressure in the processing chamber is maintained at a relatively low value; the substrate (1) is maintained at a specific treatment temperature; a plasma (P) is generated by at least one plasma cascade source (3) mounted on the processing chamber (5) at a specific distance (L) from the substrate surface; at least a part of the plasma (P) generated by each source (3) is brought into contact with the substrate surface; and flows of silane and ammonia are supplied to said part of the plasma (P).

Abstract: A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: