Abstract: The present invention relates to a device for heat treating an object, in particular a coated substrate, with an in particular gas-tightly sealable housing that encloses a hollow space, wherein the hollow space has a separating wall, by which the hollow space is divided into a process space for accommodating the object and an intermediate space, wherein the separating wall has one or a plurality of openings, which are implemented such that the separating wall acts as a barrier for the diffusion out of the process space into the intermediate space of a gaseous substance generated in the process space by the heat treatment of the object. The housing has at least one housing section coupled to a cooling device for its active cooling, wherein the separating wall is arranged between the object and the coolable housing section. The invention further relates to the use of a separating wall as a diffusion barrier in a device for heat treating an object as well as a corresponding method for heat treating an object.

Abstract: The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and i

Abstract: The present invention relates to a device for heat treating an object, in particular a coated substrate, with an in particular gas-tightly sealable housing that encloses a hollow space, wherein the hollow space has a separating wall, by which the hollow space is divided into a process space for accommodating the object and an intermediate space, wherein the separating wall has one or a plurality of openings, which are implemented such that the separating wall acts as a barrier for the diffusion out of the process space into the intermediate space of a gaseous substance generated in the process space by the heat treatment of the object. The housing has at least one housing section coupled to a cooling device for its active cooling, wherein the separating wall is arranged between the object and the coolable housing section. The invention further relates to the use of a separating wall as a diffusion barrier in a device for heat treating an object as well as a corresponding method for heat treating an object.

Abstract: The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and i

Abstract: The present invention relates to a process box for processing a coated substrate, with the following features: a gas-tightly sealable housing, which forms a hollow space; the housing comprises at least one housing section, which is implemented such that the substrate is heat treatable by electromagnetic thermal radiation incident on the housing section; the housing has at least one housing section coupleable to a cooling device for its cooling and at least one non-coolable housing section; the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the temperature-controlable housing section; the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and introducing process gas into the hollow space.

Abstract: A device for continuous heat-treating of at least two multilayer bodies on at least two process levels disposed one beneath another in at least one heating chamber and at least one cooling chamber, which are arranged one after another is described. The heating chamber of the device has a first process level and a second process level. The cooling chamber of the device has a cooling device, the first process level and the second process level.

Abstract: The invention relates to a heat treatment inner chamber (3) for thermally processing a substrate (20), having walls (10) which enclose an inner space (24) of the heat treatment inner chamber (3), having a mounting apparatus (8) for mounting the substrate (20) during the thermal processing and having an energy source (11) for introducing energy into the inner space (24) of the heat treatment inner chamber (3), at least one part of the inner sides of the walls (10) being formed in order to reflect power introduced by the energy source (11), wherein the at least one part of the inner sides of the walls (10) consists of a material which is highly reflective at least for infrared radiation.

Abstract: The invention relates to a device (1) and to a method for tempering objects (2, 15). According to the invention, a temporary process box (11) is used to overcome the disadvantages of tempering processes previously known, in particular to achieve a high level of reproducibility and a high throughput during the tempering process, at the same time reducing the investment costs such that overall, the entire tempering process is carried out in a highly economical manner.

Abstract: A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 ?m and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 ?m×1 ?m reference area. Furthermore, there is a process for producing the semiconductor wafer.

Abstract: A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 &mgr;m×1 &mgr;m reference area. Furthermore, there is a process for producing the semiconductor wafer.

Abstract: A method and device for detecting an incorrect position of a semiconductor wafer during a high-temperature treatment of the semiconductor water in a quartz chamber which is heated by IR radiators, has the semiconductor wafer lying on a rotating support and being held at a specific temperature with the aid of a control system. Thermal radiation which is emitted by the semiconductor wafer and the IR radiators is recorded using a pyrometer. The radiation temperature of the recorded thermal radiation is determined. The semiconductor wafer is assumed to be in an incorrect position if the temperature of the recorded thermal radiation fluctuates to such an extent over the course of time that the fluctuation width lies outside a fluctuation range &Dgr;T which is regarded as permissible.