Patents by Inventor Martin Kirkengen
Martin Kirkengen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162428Abstract: The present invention concerns a method for manufacturing microcrystalline nanoscaled silicon particles, the particles made thereof, and a secondary electrochemical cell utilising the particles as the active material of the negative electrode of the secondary electrochemical cell, wherein the silicon particles comprises a chemical compound of formula: Si(1?x)Mx, where 0.005?x?0.20 and M is at least one substitution element chosen from; C, N, or a mixture thereof, and wherein the particles have been subject to a heat treatment of 800 to 900° C. and transformed into a microcrystalline phase having crystallite sizes in the range of 1 to 15 nm.Type: ApplicationFiled: March 25, 2022Publication date: May 16, 2024Applicant: CENATE ASInventors: Martin Kirkengen, Werner Filtvedt, Erik Sauar
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Publication number: 20230092576Abstract: A method for manufacturing predominantly amorphous silicon-containing particles includes a chemical compound of formula: Si(1?x)Cx, where 0.005?x<0.05. The particles, when subjected to XRD analysis applying unmonochromated CuK? radiation, exhibit one peak at around 28° and one peak at around 52°. Both peaks have a Full Width at Half Maximum of at least 5° when using Gaussian peak fitting. The method includes forming a homogeneous gas mixture of a first precursor gas of a silicon containing compound and at least one second precursor gas of a substitution element M containing compound, injecting the homogeneous gas mixture of the first and second precursor gases into a reactor space where the precursor gases are heated to a temperature in the range of from 700 to 900° C. so that the precursor gases react and form particles, and collecting and cooling the particles to a temperature in the range of from ambient temperature up to about 350° C.Type: ApplicationFiled: February 12, 2021Publication date: March 23, 2023Applicant: CENATE ASInventors: Martin Kirkengen, Erik Sauar, Werner Filtvedt
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Publication number: 20200067092Abstract: Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510° C. to 1300° C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.Type: ApplicationFiled: May 30, 2017Publication date: February 27, 2020Inventors: Martin Kirkengen, Asbjorn Ulvestad, Hanne F Andersen, Werner Filtvedt, Arve Holt, Hallgeir Klette, Trygve Mongstad, Jan Petter Maehlen, Ornulf Nordseth, Thomas Preston
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Patent number: 10461208Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.Type: GrantFiled: May 30, 2017Date of Patent: October 29, 2019Assignee: REC SOLAR PTE. LTD.Inventors: Martin Kirkengen, Erik Sauar
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Publication number: 20170317224Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapour deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.Type: ApplicationFiled: May 30, 2017Publication date: November 2, 2017Applicant: REC SOLAR PTE. LTD.Inventors: Martin KIRKENGEN, Erik SAUAR
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Patent number: 9748418Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.Type: GrantFiled: May 25, 2012Date of Patent: August 29, 2017Assignee: REC SOLAR PTE. LTD.Inventors: Martin Kirkengen, Erik Sauar
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Publication number: 20150280222Abstract: Method for producing a powder of particles comprising a core region (26) and a shell region (28), said core region (26) comprising amorphous or microcrystalline Silicon and said core region (26) comprising a passivating material. The method comprises the steps of supplying a reactant gas (12) containing Silicon to a reaction chamber (16) of a reactor, and heating said reactant gas (12) to a temperature sufficient for thermal decomposition or reduction of the reactant gas (12) to take place inside the reaction chamber (16) to thereby produce nano- to micro-scale particles of amorphous or microcrystalline Silicon, and thereafter coating said particles with passivating material.Type: ApplicationFiled: October 17, 2013Publication date: October 1, 2015Applicant: INSTITUTT FOR ENERGITEKNIKKInventor: Martin Kirkengen
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Publication number: 20140096819Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapour deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.Type: ApplicationFiled: May 25, 2012Publication date: April 10, 2014Applicant: REC Modules Pte., Ltd.Inventors: Martin Kirkengen, Erik Sauar