Patents by Inventor Martin Matschitsch

Martin Matschitsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Holding means
    Publication number: 20020140148
    Abstract: For especially simple and reliable handling of thin and/or bent semiconductor wafers it is proposed in a corresponding holding means (100) that there is a gas flowing through at least one first means (5) for producing the forces which pull a semiconductor wafer toward the means (100) based on the Bernoulli principle and that there is at least one second means (2, 3) for holding the semiconductor wafer on the means (100) as a result of the forces produced by at least one electromagnetic field.
    Type: Application
    Filed: December 13, 2001
    Publication date: October 3, 2002
    Inventors: Kurt Aigner, Alfred Binder, Gerhard Kroupa, Martin Matschitsch, Gerhard Pucher, Werner Scherf, Josef Unterweger, Stefan Zerlauth
  • Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping
    Patent number: 6309965
    Abstract: To markedly reduce wafer warping of semiconductor wafers without weakening the strength of adhesion to substrate materials, a novel back side metallizing system is presented. On a silicon semiconductor body an aluminum layer and a diffusion barrier layer that includes titanium are provided. A titanium nitride layer is incorporated into the titanium layer because it has been demonstrated that the titanium nitride layer can compensate for a large proportion of the wafer warping that occurs. Preferably, the usual tempering for improving the ohmic contact between the aluminum layer and the silicon semiconductor body is not performed after the complete metallizing of the semiconductor body, but rather after a first, thin aluminum layer has been deposited onto the silicon semiconductor body.
    Type: Grant
    Filed: September 20, 2000
    Date of Patent: October 30, 2001
    Assignee: Siemens Aktiengesellschaft
    Inventors: Martin Matschitsch, Thomas Laska, Herbert Mascher, Andreas Mätzler, Werner Stefaner, Gernot Moik
  • Semiconductor body with metallizing on the back side
    Patent number: 6147403
    Abstract: To markedly reduce wafer warping of semiconductor wafers without weakening the strength of adhesion to substrate materials, a novel back side metallizing system is presented. On a silicon semiconductor body an aluminum layer and a diffusion barrier layer that includes titanium are provided. A titanium nitride layer is incorporated into the titanium layer because it has been demonstrated that the titanium nitride layer can compensate for a large proportion of the wafer warping that occurs. Preferably, the usual tempering for improving the ohmic contact between the aluminum layer and the silicon semiconductor body is not performed after the complete metallizing of the semiconductor body, but rather after a first, thin aluminum layer has been deposited onto the silicon semiconductor body.
    Type: Grant
    Filed: April 8, 1999
    Date of Patent: November 14, 2000
    Assignee: Infineon Technologies AG
    Inventors: Martin Matschitsch, Thomas Laska, Herbert Mascher, Andreas Matzler, Werner Stefaner, Gernot Moik