Abstract: A delay locked loop (DLL) circuit having an expanded operating frequency range is achieved by providing multiple DLLs, each having a different range of operating frequencies. A selection mechanism selects the DLL with the appropriate operating frequency range. The output of the selected DLL is used as the output of the delay locked loop circuit and is fed back to the input of the selected DLL so as to achieve phase lock with an input signal. The selection mechanism can operate in accordance with, among other things, a metallization mask option, the state of one or more pins, the state of one or more bits of a software accessible register or storage device, or the output of a frequency detector which detects the frequency of the input clock signal. The selection mechanism can also cause the selected DLL to be activated and the unselected DLL(s) to be deactivated, thereby conserving power.

Abstract: An integrated semiconductor memory includes a parallel test device and block groups. The parallel test device is used for writing in and evaluating data to be written into and read out of the semiconductor memory. Several groups of memory cells can be simultaneously tested for operation in a test mode, with each group being disposed along a respective word line. The data read out during the process can be evaluated by the parallel test device. The result of the evaluation is present, separately for each group of memory cells, on I/O data lines of the semiconductor memory. The semiconductor memory can also have redundant memory cells, in which case defective memory cells or groups of memory cells can be replaced in connection with the test mode.

Abstract: A semiconductor memory includes a rectangular chip surface having corners. Four combined cell field blocks are each disposed at a respective one of the corners of the chip surface. Rectangular cell field blocks are combined in each of the combined cell field blocks, with each two of the cell field blocks having edges facing each other. Cell fields are combined into each of the cell field blocks, with the cell fields having word and bit lines. Decoder blocks face each other on the edges of the cell field blocks. The chip surface has a surface area between the decoder blocks being free of cell fields. Peripheral circuit blocks are disposed inside the surface area being free of cell fields. Connection paths are disposed inside the surface area being free of cell fields for connecting the semiconductor memory to connections of a housing.