Abstract: A two-channel semiconductor component has a doped semiconductor body formed from a group IV semiconductor material, a top-side top-gate electrode, and a bottom-side bottom-gate electrode. A source region has a greater extent in a depth direction in the silicon body than a drain region. A source isolation region is arranged between a source region and the top-gate electrode, and a drain isolation region is arranged between a drain region and the top-gate electrode, which isolation region extends in a depth direction as far as to the lower edge of a gate isolation layer of the top-gate electrode. In a first operating state a first conductive channel separated laterally from the source region by the source isolation region can be formed, as can a second conductive channel, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels.

Abstract: A two-channel semiconductor component has a doped semiconductor body formed from a group IV semiconductor material, a top-side top-gate electrode, and a bottom-side bottom-gate electrode. A source region has a greater extent in a depth direction in the silicon body than a drain region. A source isolation region is arranged between a source region and the top-gate electrode, and a drain isolation region is arranged between a drain region and the top-gate electrode, which isolation region extends in a depth direction as far as to the lower edge of a gate isolation layer of the top-gate electrode. In a first operating state a first conductive channel separated laterally from the source region by the source isolation region can be formed, as can a second conductive channel, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels.