Abstract: A header component for mounting an inductive component on a substrate comprises a housing for housing the inductive component inside a cavity, wherein the housing confines the cavity to a bottom side and to at least three lateral sides, and wherein the housing comprises a top opening to the cavity at a top side opposite to the bottom side, wherein the top opening is configured for inserting the inductive component into the cavity via the top opening. The header component further comprises a plurality of terminals for electrically connecting the inductive component to the substrate, wherein the terminals outwardly protrude from the housing at the bottom side. Further disclosed are an inductive device and a method for assembling an inductive device.

Abstract: A floating platform for high-power wind turbines, comprising a concrete substructure, said concrete substructure forming the base of the platform, which remains semi-submerged in the operating position, and consisting of a square lower slab on which a series of beams and five hollow reinforced concrete cylinders are constructed, distributed at the corners and the center of said lower slab; a metal superstructure supported on the concrete substructure and forming the base for connection with the wind turbine tower, said tower being coupled at the center thereof; and metal covers covering each of the cylinders, on which the metal superstructure is supported and to which vertical pillars are secured, linked together by beams, which join at the central pillar by an element whereon the base of the wind turbine tower is secured.

Abstract: A dissolvable alloy, the chemical composition of which comprises aluminum between 2.5% and 9%; zinc between 0.1% and 1.5%; iron between 0.01% and 3%; and magnesium the remainder, such alloy being usable in tools and components of the petroleum industry.

Abstract: A dissolvable alloy, the chemical composition of which comprises aluminum between 2.5% and 9%; zinc between 0.1% and 1.5%; iron between 0.01% and 3%; and magnesium the remainder, such alloy being usable in tools and components of the petroleum industry.

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: Calibration of a multiphase flow meter to be used in a production process can be achieved by using a closed multiphase flow loop. In the device and method of the invention, the flow rates of each phase, oil and water, are individually measured after their separation using a separation vessel, and used as a reference for the calibration of a multiphase flow meter. Flow loop control is achieved by combining an oil-water interface position control and an oil level control in the separation vessel.

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract: Automated measurement and oil well production control may be achieved by using a vertical separator, the discharge flow of which is continuously adjusted by setting the opening of a control valve, determined by the liquid level inside the separator. The automation of the control method allows real-time measurements of several process variables as well as reduced measurement times and also works as a safety layer for a production process. The control method is independent of well production and is therefore suited to controlling marginal wells.

Abstract: A method of improving temperature uniformity across a wafer or substrate is provided. The inventors have discovered that thermal radiation reflected from the showerhead injector affects the temperature uniformity across the wafer. Temperature uniformity across the wafer, particularly from the center to edge of the wafer, is improved by controlling the reflected energy from the showerhead. Control of the reflected energy from the showerhead is achieved by a variety of means, including changing the emissivity of the showerhead, creating different zones of emissivity of the showerhead, selectively heating the showerhead, varying the distance between the showerhead and the wafer, and increasing reflectivity of the showerhead in selected regions by employing an ring configured to emit thermal radiation to the showerhead which is then reflected back to the wafer.