Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.

Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.

Abstract: A method of debonding a substrate from a layer sequence includes a) providing a composite including a wafer with the substrate, the layer sequence applied to a growth surface of the substrate, and a sacrificial layer arranged between the substrate and the layer sequence, a carrier on a cover surface of the layer sequence facing away from the substrate, and at least two separating trenches extending in the vertical direction through the layer sequence and to and/or through the sacrificial layer, b) attaching a pumping device on the composite and forming a second direct flow path between the separating trenches and the pumping device, c) introducing the composite into an etching bath with an etching solution, d) generating a pressure gradient between separating trenches and the etching solution, and e) debonding the substrate.

Abstract: A circuit board for an optoelectronic semiconductor chip includes an electrically conductive first metal foil, a first electrically insulating foil, an electrically conductive second metal foil, wherein the first electrically insulating foil is applied to the first metal foil at a top side of the first metal foil and mechanically connects thereto, the first electrically insulating foil has a recess in which the first metal foil is exposed, the recess electrically conductively fixes the optoelectronic semiconductor chip to the first metal foil within the recess, the second metal foil is applied at a top side of the first electrically insulating foil, the top side facing away from the first metal foil, and mechanically connects to the electrically insulating foil, the first electrically insulating foil is free of the second metal foil at least in the region of the recess, and the second metal foil electrically contacts the optoelectronic semiconductor chip.

Abstract: The invention relates to an optoelectronic component (101, 301, 501), comprising a substrate (103, 303, 503), on which a semiconductor layer sequence (105, 305, 505) has been placed, wherein the semiconductor layer sequence (105, 305, 505) has at least one identifier (115, 315) for identifying the component (101, 301, 501). The invention also relates to a method for producing an optoelectronic component (101, 301, 501).

Abstract: In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer provided for generating radiation. The semiconductor chip can be operated in a first operating mode and in a second operating mode. The semiconductor layer sequence emits radiation in the first operating mode, while the semiconductor layer sequence emits no radiation in the second operating mode. The semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode. A display including a number of semiconductor chips of this type and a use as a motor vehicle headlight are furthermore specified.

Abstract: The invention relates to an optoelectronic component (101, 301, 501), comprising a substrate (103, 303, 503), on which a semiconductor layer sequence (105, 305, 505) has been placed, wherein the semiconductor layer sequence (105, 305, 505) has at least one identifier (115, 315) for identifying the component (101, 301, 501). The invention also relates to a method for producing an optoelectronic component (101, 301, 501).

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The minor is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined.

Abstract: In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer provided for generating radiation. The semiconductor chip can be operated in a first operating mode and in a second operating mode. The semiconductor layer sequence emits radiation in the first operating mode, while the semiconductor layer sequence emits no radiation in the second operating mode. The semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode. A display including a number of semiconductor chips of this type and a use as a motor vehicle headlight are furthermore specified.

Abstract: A circuit board for an optoelectronic semiconductor chip includes an electrically conductive first metal foil, a first electrically insulating foil, an electrically conductive second metal foil, wherein the first electrically insulating foil is applied to the first metal foil at a top side of the first metal foil and mechanically connects thereto, the first electrically insulating foil has a recess in which the first metal foil is exposed, the recess electrically conductively fixes the optoelectronic semiconductor chip to the first metal foil within the recess, the second metal foil is applied at a top side of the first electrically insulating foil, the top side facing away from the first metal foil, and mechanically connects to the electrically insulating foil, the first electrically insulating foil is free of the second metal foil at least in the region of the recess, and the second metal foil electrically contacts the optoelectronic semiconductor chip.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The mirror is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined.

Abstract: An LED illumination device (10) having a first LED chip (1) and a second LED chip (2) is described, wherein the first LED chip (1) is suitable to emit radiation having a first emission characteristic (A1) and the second LED chip (2) is suitable to emit radiation having a second emission characteristic (A2). The first emission characteristic (A1) and the second emission characteristic (A2) have temperature-dependent changes (?A1T, ?A1T), wherein the temperature-dependent change (?A1T) in the first emission characteristic (A1) and the temperature-dependent change (?A2T) in the second emission characteristic (A2) are, in operation, at least partially compensated for or are synchronised with respect to each other such that the chromaticity co-ordinate remains stable. Furthermore, a method for producing such an illumination device (10) is described.

Abstract: In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 ?m.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.

Abstract: An electronic device according to the invention includes a housing, a recess containing an optoelectronic component, and a film including a polyimide, which is over the recess covering the optoelectronic component.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.