Abstract: The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state.

Abstract: A method for desmearing resin accretions from the surface of a substrate and texturing resins by generating a free radical which attacks and removes the resin accretions and textures the resin.

Abstract: A combined adhesion promotion method of a metal to a non-conductive substrate and directly metallizing the non-conductive substrate with the metal. The method involves texturing a non-conductive substrate with a cobalt etch followed by applying a sulfide to the textured non-conductive substrate to provide an electrically conductive surface on the non-conductive substrate. After the surface of the non-conductive substrate has been made electrically conductive, the surface of the non-conductive substrate can be directly metallized. The method reduces the number of process steps for direct metallization of a non-conductive substrate. Thus, the method is more efficient in contrast to conventional methods of metallizing a non-conductive substrate.

Abstract: Disclosed are new catalysts for electroless metallization deposition, particularly catalysts that can be selectively activated and may be free of palladium and/or tin. Catalysts of the invention are preferably employed for electroless copper deposition.

Abstract: Disclosed are catalyst compositions suitable for depositing electroless metal seed layers and for enhancing discontinuous seed layers. Also disclosed are methods of depositing electroless seed layers and enhancing discontinuous seed layers.

Abstract: A combined adhesion promotion method of a metal to a non-conductive substrate and directly metallizing the non-conductive substrate with the metal. The method involves texturing a non-conductive substrate with a cobalt etch followed by applying a sulfide to the textured non-conductive substrate to provide an electrically conductive surface on the non-conductive substrate. After the surface of the non-conductive substrate has been made electrically conductive, the surface of the non-conductive substrate can be directly metallized. The method reduces the number of process steps for direct metallization of a non-conductive substrate. Thus, the method is more efficient in contrast to conventional methods of metallizing a non-conductive substrate.

Abstract: Disclosed are catalyst compositions suitable for depositing electroless metal seed layers and for enhancing discontinuous seed layers. Also disclosed are methods of depositing electroless seed layers and enhancing discontinuous seed layers.

Abstract: Disclosed are new catalysts for electroless metallization deposition, particularly catalysts that can be selectively activated and may be free of palladium and/or tin. Catalysts of the invention are preferably employed for electroless copper deposition.

Abstract: The invention provides novel processes and apparatus for removal of copper from a solution or fluid, particularly spent etchant solutions that contain copper produced through printed circuit board manufacture. The invention is particularly useful for recovery/removal of copper from aqueous admixtures that contain a copper complexing agent.

Abstract: A method is described of manufacturing perovskite lead scandium tantalate comprising the pre-reaction of scandium and tantalum oxides at temperatures between 1000.degree. C. and 1400.degree. C. to form scandium tantalate. The scandium tantalate is then reacted with lead oxide to form the desired perovskite phase lead scandium tantalate. In one embodiment there is described a method for the deposition of perovskite lead scandium tantalate films from metal organic precusors. The availability of metal organic precursors allows the deposition of thin films directly from solution or by MOCVD techniques. One particular material, lead scandium tantalate Pb(Sc.sub.0.5 Ta.sub.0.5)O.sub.3, is described. The principal features of the invention are the deposition of scandium and tantalum components from solution or by MOCVD onto the required substrate. These are then prereacted to yield scandium tantalate.

Abstract: The plastic encapsulation material covering an integrated circuit is impregnated with a corrosion inhibitor evenly dispensed throughout the material. This inhibits the corrosion of the metallization on the surface of the integrated circuit thus prolonging the life of the device particularly under adverse environmental conditions.