Patents by Inventor Martin Villafana

Martin Villafana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10132861
    Abstract: A transparent coversheet intervenes between a lens and a thinned die in a visible light fault analysis tool so that the thinned die is robust to fractures. In addition, the transparent coversheet has a greater thermal mass than the thinned die and thus acts as a heat sink to prevent active circuitry in the thinned die from overheating during the visible light fault analysis.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: November 20, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Rama Rao Goruganthu, Gaurav Sunil Mattey, Martin Villafana
  • Publication number: 20180080983
    Abstract: A transparent coversheet intervenes between a lens and a thinned die in a visible light fault analysis tool so that the thinned die is robust to fractures. In addition, the transparent coversheet has a greater thermal mass than the thinned die and thus acts as a heat sink to prevent active circuitry in the thinned die from overheating during the visible light fault analysis.
    Type: Application
    Filed: September 16, 2016
    Publication date: March 22, 2018
    Inventors: Rama Rao Goruganthu, Gaurav Sunil Mattey, Martin Villafana
  • Patent number: 9599666
    Abstract: A method and apparatus for mapping an electronic device. The electronic device is loaded into a test fixture, which may be an automated test equipment (ATE). A laser beam is stepped across locations of interest. At each location of interest a minimum voltage and/or maximum frequency are computed. A contour map of the changes in minimum voltage and maximum frequency across a field of view of the electronic device is generated. Additional embodiments provide signaling a laser scan module during the rising edge of a synchronization pulse to indicate that minimum voltage (Vmin) and maximum frequency (Fmax) specification search data is provided to a laser voltage probe. A Vmin/Fmax module compares the specification search data with the data read from the laser voltage probe and computes a parameter shift value. The laser beam is moved to another location when the falling edge of the synchronization pulse occurs.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: March 21, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Lavakumar Ranganathan, Martin Villafana, Lesly Zaren Venturina Endrinal
  • Publication number: 20160116531
    Abstract: A method and apparatus for mapping an electronic device. The electronic device is loaded into a test fixture, which may be an automated test equipment (ATE). A laser beam is stepped across locations of interest. At each location of interest a minimum voltage and/or maximum frequency are computed. A contour map of the changes in minimum voltage and maximum frequency across a field of view of the electronic device is generated. Additional embodiments provide signaling a laser scan module during the rising edge of a synchronization pulse to indicate that minimum voltage (Vmin) and maximum frequency (Fmax) specification search data is provided to a laser voltage probe. A Vmin/Fmax module compares the specification search data with the data read from the laser voltage probe and computes a parameter shift value. The laser beam is moved to another location when the falling edge of the synchronization pulse occurs.
    Type: Application
    Filed: October 28, 2014
    Publication date: April 28, 2016
    Inventors: Lavakumar Ranganathan, Martin Villafana, Lesly Zaren Venturina Endrinal
  • Patent number: 8420410
    Abstract: A semiconductor die includes a group of spacer cells within the semiconductor die. The spacer cells include fiducial markings therein. The fiducial markings can be located within a metal layer, a diffusion layer, a polysilicon layer, and/or a Shallow Trench Isolation (STI) structure.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: April 16, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Michael Laisne, Xiangdong Pan, Foua Vang, Prayag B. Patel, Donald D. Lyons, Martin Villafana
  • Publication number: 20110164808
    Abstract: A semiconductor die includes a group of spacer cells within the semiconductor die. The spacer cells include fiducial markings therein. The fiducial markings can be located within a metal layer, a diffusion layer, a polysilicon layer, and/or a Shallow Trench Isolation (STI) structure.
    Type: Application
    Filed: July 7, 2010
    Publication date: July 7, 2011
    Applicant: QUALCOMM INCORPORATED
    Inventors: Michael Laisne, Xiangdong Pan, Foua Vang, Prayag B. Patel, Donald D. Lyons, Martin Villafana
  • Patent number: 6573735
    Abstract: Electronic devices, such as IC devices, are tested by determining a failure net within the electronic device that is causing a device failure. After identifying the failure net, the failure net is locally stressed. The stress is applied so that only the net being tested is subjected to the stress, and the remaining nets and components of the device are not stressed. A change in a signal produced by the failure net is observed while the failure net is being subjected to the stress. Testing in this manner assists in identifying the failure net as a failure source of the device.
    Type: Grant
    Filed: June 8, 2001
    Date of Patent: June 3, 2003
    Assignee: Qualcomm Incorporated
    Inventors: William Xia, Martin Villafana, Jonathan Tappan, Tim Watson, Michael Campbell
  • Publication number: 20020186028
    Abstract: Electronic devices, such as IC devices, are tested by determining a failure net within the electronic device that is causing a device failure. After identifying the failure net, the failure net is locally stressed. The stress is applied so that only the net being tested is subjected to the stress, and the remaining nets and components of the device are not stressed. A change in a signal produced by the failure net is observed while the failure net is being subjected to the stress. Testing in this manner assists in identifying the failure net as a failure source of the device.
    Type: Application
    Filed: June 8, 2001
    Publication date: December 12, 2002
    Inventors: William Xia, Martin Villafana, Jonathan Tappan, Tim Watson, Michael Campbell