Abstract: Systems and methods include assignment of first data artifacts stored in a volatile memory to a first database tenant object instance stored in the volatile memory, storage, in a persistent storage system, of a first payload database comprising a first encryption key for encrypting and decrypting the first data artifacts, storage, in the persistent storage system, a second payload database comprising a second encryption key for encrypting and decrypting second data artifacts not assigned to a database tenant object instance, and storage, in the persistent storage system, of a configuration database comprising a first portion including information usable for decrypting the first encryption key and a second portion including information usable for decrypting the second encryption key.

Abstract: A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.

Abstract: The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely.

Abstract: The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely.

Abstract: A method or fabricating a surface emitting semiconductor device like a GaAs-based vertical cavity surface emitting laser diode comprising basically a substrate, two stacks of Bragg mirrors surrounding a laser cavity containing the active region and a contact layer on top of the DBR facing the light extraction window 13 featuring a layer (2) made form gallium-indium-phosphide (GaInP) epitaxially deposited during the growth of the layer sequence.