Patents by Inventor Marvin Farley
Marvin Farley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7872247Abstract: A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.Type: GrantFiled: October 11, 2007Date of Patent: January 18, 2011Assignee: Applied Materials, Inc.Inventors: Geoffrey Ryding, Gregory Robert Alcott, Lee Spraggon, Robert Mitchell, Martin Hilkene, Matthew Castle, Marvin Farley
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Publication number: 20100181470Abstract: An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.Type: ApplicationFiled: January 22, 2009Publication date: July 22, 2010Applicant: Axcelis Technologies, Inc.Inventors: Marvin Farley, Donald Polner, Geoffrey Ryding, Theodore Smick, Takao Sakase, Ronald Horner, Edward Eisner, Paul Eide, Brian Freer, Mark Lambert, Donovan Beckel
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Publication number: 20090321630Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.Type: ApplicationFiled: June 3, 2009Publication date: December 31, 2009Applicant: Axcelis Technologies, Inc.Inventors: Geoffrey Ryding, Theodore Smick, Marvin Farley, Takao Sakase, Bo Vanderberg
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Publication number: 20090321631Abstract: An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.Type: ApplicationFiled: June 18, 2009Publication date: December 31, 2009Applicant: Axcelis Technologies, Inc.Inventors: Theodore Smick, Geoffrey Ryding, Ronald F. Horner, Paul Eide, Marvin Farley, Kan Ota
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Patent number: 7611975Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: September 27, 2006Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Peter Michael Banks, Matthew Peter Dobson, Peter Kindersley, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 7582883Abstract: This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.Type: GrantFiled: January 12, 2007Date of Patent: September 1, 2009Assignee: Applied Materials, Inc.Inventors: Geoffrey Ryding, Takao Sakase, Marvin Farley, Theodore H. Smick
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Publication number: 20090095916Abstract: A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.Type: ApplicationFiled: October 11, 2007Publication date: April 16, 2009Inventors: Geoffrey Ryding, Gregory Robert Alcott, Lee Spraggon, Robert Mitchell, Martin Hilkene, Matthew Castle, Marvin Farley
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Patent number: 7479644Abstract: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.Type: GrantFiled: October 30, 2006Date of Patent: January 20, 2009Assignee: Applied Materials, Inc.Inventors: Geoffrey Ryding, Takao Sakase, Marvin Farley, Theodore Smick
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Publication number: 20080169435Abstract: This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the floating potential across an ion beam used for implantation. The invention provides a ion beam monitoring arrangement comprising a device configured to measure the floating potential of an ion beam when incident thereon, wherein the device is coupled to a substrate support so as to face outwardly in a position so as not to be obscured by a substrate of the contemplated size when held by the substrate holder. Thus, measurements of the floating potential may be taken with a substrate held in place. The ion beam monitoring arrangement may be used to move the device into the ion beam in much the same way as it used to scan a substrate through the ion beam.Type: ApplicationFiled: January 12, 2007Publication date: July 17, 2008Inventors: Takao Sakase, Marvin Farley, Steven C. Hays
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Publication number: 20080169434Abstract: This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.Type: ApplicationFiled: January 12, 2007Publication date: July 17, 2008Inventors: Geoffrey Ryding, Takao Sakase, Marvin Farley, Theodore H. Smick
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Publication number: 20080142727Abstract: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.Type: ApplicationFiled: October 30, 2006Publication date: June 19, 2008Inventors: Geoffrey Ryding, Takao Sakase, Marvin Farley, Theodore Smick
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Publication number: 20080099696Abstract: This invention relates to shaped apertures in an ion implanter that may act to clip an ion beam and so adversely affect uniformity of an implant. In particular, the present invention finds application in ion implanters that employ scanning of a substrate to be implanted relative to the ion beam such that the ion beam traces a raster pattern over the substrate. An ion implanter is provided comprising: a substrate scanner arranged to scan a substrate repeatedly through an ion beam in a scanning direction substantially transverse to the ion beam path, thereby forming a series of scan lines across the substrate; and an aperture plate having provided therein an aperture positioned on the ion beam path upstream of the substrate scanner, and wherein the aperture is defined in part by an inwardly-facing projection.Type: ApplicationFiled: October 31, 2006Publication date: May 1, 2008Inventors: Geoffrey Ryding, Takao Sakase, Marvin Farley, Steven Hays
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Publication number: 20070259511Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: ApplicationFiled: May 4, 2006Publication date: November 8, 2007Inventors: Adrian Murrell, Bernard Harrison, Peter Edwards, Peter Kindersley, Craig Lowrie, Peter Banks, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 7282427Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: May 4, 2006Date of Patent: October 16, 2007Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Bernard Harrison, Peter Ivor Tudor Edwards, Peter Kindersley, Craig Lowrie, Peter Michael Banks, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 7253424Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: May 4, 2006Date of Patent: August 7, 2007Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Bernard Harrison, Peter Ivor Tudor Edwards, Peter Kindersley, Craig Lowrie, Peter Michael Banks, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 7235797Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: May 24, 2005Date of Patent: June 26, 2007Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Bernard Harrison, Peter Edwards, Peter Kindersley, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Publication number: 20070105355Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: ApplicationFiled: September 27, 2006Publication date: May 10, 2007Applicant: Applied Materials, Inc.Inventors: Adrian Murrell, Peter Banks, Matthew Dobson, Peter Kindersley, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Publication number: 20060197016Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: ApplicationFiled: May 4, 2006Publication date: September 7, 2006Inventors: Adrian Murrell, Bernard Harrison, Peter Edwards, Peter Kindersley, Craig Lowrie, Peter Banks, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 7049210Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: January 12, 2004Date of Patent: May 23, 2006Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Bernard Harrison, Peter Ivor Tudor Edwards, Peter Kindersley, Craig Lowrie, Peter Michael Banks, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Patent number: 6989315Abstract: An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.Type: GrantFiled: June 19, 2001Date of Patent: January 24, 2006Assignee: Ibis Technology, Inc.Inventors: Robert Dolan, Bernhard Cordts, Marvin Farley, Geoffrey Ryding