Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-? and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (?). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.

Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-? and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (?). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.