Patents by Inventor Mary Crawford

Mary Crawford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wound-care composition and method of use
    Patent number: 11957710
    Abstract: Wound-care composition and method of use. The composition comprises: a substrate; potassium alum; and urea. The potassium alum makes up 10.27 wt. % of the composition within a tolerance of +/- 50%; and the urea makes up 0.12 wt. % of the composition within a tolerance of +/- 50%. The method comprises applying the composition to a wound on a non-human animal.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: April 16, 2024
    Inventors: Mary Crawford, Jonathon Crawford
  • Wound-Care Composition and Method of Use
    Publication number: 20230321139
    Abstract: Wound-care composition and method of use. The composition comprises: a substrate; potassium alum; and urea. The potassium alum makes up 10.27 wt. % of the composition within a tolerance of +/- 50%; and the urea makes up 0.12 wt. % of the composition within a tolerance of +/- 50%. The method comprises applying the composition to a wound on a non-human animal.
    Type: Application
    Filed: April 6, 2022
    Publication date: October 12, 2023
    Inventors: Mary Crawford, Jonathon Crawford
  • Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
    Patent number: 11715635
    Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: August 1, 2023
    Inventors: Morteza Monavarian, Daniel Feezell, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew Allerman, Andrew Armstrong, Mary Crawford
  • REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS BY PHOTOELECTROCHEMICAL ETCHING
    Publication number: 20220068632
    Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
    Type: Application
    Filed: November 12, 2021
    Publication date: March 3, 2022
    Inventors: Morteza MONAVARIAN, Daniel FEEZELL, Andrew ARAGON, Saadat MISHKAT-UL-MASABIH, Andrew ALLERMAN, Andrew ARMSTRONG, Mary CRAWFORD
  • Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
    Patent number: 11177126
    Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: November 16, 2021
    Inventors: Morteza Monavarian, Daniel Feezell, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew Allerman, Andrew Armstrong, Mary Crawford
  • REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS BY PHOTOELECTROCHEMICAL ETCHING
    Publication number: 20200161126
    Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
    Type: Application
    Filed: November 14, 2019
    Publication date: May 21, 2020
    Inventors: Morteza MONAVARIAN, Daniel FEEZELL, Andrew ARAGON, Saadat MISHKAT-UL-MASABIH, Andrew ALLERMAN, Andrew ARMSTRONG, Mary CRAWFORD
  • High efficiency III-nitride light-emitting diodes
    Patent number: 8451877
    Abstract: Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: May 28, 2013
    Assignee: Sandia Corporation
    Inventors: Mary Crawford, Daniel Koleske, Jaehee Cho, Di Zhu, Ahmed Noemaun, Martin F. Schubert, E. Fred Schubert