Patents by Inventor Mary E. Day

Mary E. Day has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation
    Patent number: 6632167
    Abstract: An apparatus and method of forming a radioactive stent having a radioactive layer. A solution containing a radioactive isotope depositing substance in solution is provided and placed into contact with the stent or any other substrate material capable of receiving the radioactive isotope. The radioactive isotope is deposited on the stent or substrate material. Preferably a phosphorous isotope is used and the solution is polymerized forming polymer chains containing the radioactive isotope. In this embodiment, the phosphorous is bonded with the substrate material in a phosphorous-oxygen-phosphorous network.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: October 14, 2003
    Assignee: Varian Medical Systems, Inc.
    Inventors: Michelangelo Delfino, Mary E. Day
  • Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation
    Patent number: 6626815
    Abstract: An apparatus and method of forming a radioactive stent having a radioactive layer. A solution containing a radioactive isotope depositing substance in solution is provided and placed into contact with the stent or any other substrate material capable of receiving the radioactive isotope. The radioactive isotope is deposited on the stent or substrate material. Preferably a phosphorous isotope is used and the solution is polymerized forming polymer chains containing the radioactive isotope. In this embodiment, the phosphorous is bonded with the substrate material in a phosphorous-oxygen-phosphorous network.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: September 30, 2003
    Assignee: Varian Medical Systems, Inc.
    Inventors: Michelangelo Delfino, Mary E. Day
  • Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation
    Patent number: 6129658
    Abstract: An apparatus and method of forming a radioactive stent having a radioactive layer. A solution containing a radioactive isotope depositing substance in solution is provided and placed into contact with the stent or any other substrate material capable of receiving the radioactive isotope. The radioactive isotope is deposited on the stent or substrate material. Preferably a phosphorous isotope is used and the solution is polymerized forming polymer chains containing the radioactive isotope. In this embodiment, the phosphorous is bonded with the substrate material in a phosphorous-oxygen-phosphorous network.
    Type: Grant
    Filed: December 10, 1997
    Date of Patent: October 10, 2000
    Assignee: Varian Associates, Inc.
    Inventors: Michelangelo Delfino, Mary E. Day
  • Carbon-backed x-ray target with coating
    Patent number: 6078644
    Abstract: An x-ray target has a substrate of a carbonaceous material such as graphite which is secured to a rotary shaft so as to rotate therewith. A portion of outer peripheral surface of the substrate is covered by a target plate, while the other portion is covered with a thin iridium layer with thickness in a range between 50 .ANG. and 250 .ANG. so that the trapped gas species like H.sub.2, CO, CO.sub.2 can escape therethrough, and to retard the diffusion of ambient gas species into the substrate while the infrared emissivity of the underlying substrate is not lowered appreciably thereby.
    Type: Grant
    Filed: July 1, 1998
    Date of Patent: June 20, 2000
    Assignee: Varian Medical Systems, Inc.
    Inventors: Mary E. Day, Michelangelo Delfino
  • Plasma etch process and TiSi.sub.x layers made using the process
    Patent number: 5627105
    Abstract: A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer over the Ne etched surface and then rapidly thermally causing the metal layer to react with the underlying silicon.
    Type: Grant
    Filed: April 8, 1993
    Date of Patent: May 6, 1997
    Assignee: Varian Associates, Inc.
    Inventors: Michelangelo Delfino, Mary E. Day, Wilman Tsai