Patents by Inventor Mary E. Rothwell

Mary E. Rothwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150311422
    Abstract: A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer.
    Type: Application
    Filed: August 19, 2013
    Publication date: October 29, 2015
    Applicant: International Business Machines Corporation
    Inventors: Josephine B. Chang, George A. Keefe, Chad T. Rigetti, Mary E. Rothwell
  • Patent number: 9064717
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: June 23, 2015
    Assignee: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongqing Yu
  • Publication number: 20150155468
    Abstract: A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality of vias disposed on the first substrate.
    Type: Application
    Filed: January 30, 2015
    Publication date: June 4, 2015
    Inventors: David W. Abraham, George A. Keefe, Christian Lavoie, Mary E. Rothwell
  • Patent number: 8954125
    Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: February 10, 2015
    Assignees: International Business Machines Corporation, The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards
    Inventors: Antonio D. Corcoles Gonzalez, Jiansong Gao, Dustin A. Hite, George A. Keefe, David P. Pappas, Mary E. Rothwell, Matthias Steffen, Chang C. Tsuei, Michael R. Vissers, David S. Wisbey
  • Publication number: 20140264286
    Abstract: A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, George A. Keefe, Chad T. Rigetti, Mary E. Rothwell
  • Publication number: 20140274725
    Abstract: A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality vias disposed on the first substrate.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David W. Abraham, George A. Keefe, Christian Lavoie, Mary E. Rothwell
  • Publication number: 20130029848
    Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
    Type: Application
    Filed: July 28, 2011
    Publication date: January 31, 2013
    Applicant: International Business Machines Corporation
    Inventors: Antonio D. Corcoles Gonzalez, Jiansong Gao, Dustin A. Hite, George A. Keefe, David P. Pappas, Mary E. Rothwell, Matthias Steffen, Chang C. Tsuei, Michael R. Vissers, David S. Wisbey
  • Patent number: 8093099
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: January 10, 2012
    Assignee: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongqing Yu
  • Publication number: 20110111560
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Application
    Filed: November 9, 2009
    Publication date: May 12, 2011
    Applicant: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongging Yu
  • Patent number: 7855455
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: December 21, 2010
    Assignee: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongqing Yu
  • Publication number: 20100200992
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Application
    Filed: April 20, 2010
    Publication date: August 12, 2010
    Applicant: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongqing Yu
  • Publication number: 20100078770
    Abstract: A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art.
    Type: Application
    Filed: September 26, 2008
    Publication date: April 1, 2010
    Applicant: International Business Machines Corporation
    Inventors: Sampath Purushothaman, Mary E. Rothwell, Ghavam Ghavami Shahidi, Roy Rongqing Yu