Abstract: An apparatus includes a module base configured to carry one or more devices to be cooled. The module base includes a cover and a heat sink connected to the cover. The cover includes first and second encapsulation layers and a thermal spreader between the encapsulation layers. The first encapsulation layer is configured to receive thermal energy from the device(s). The thermal spreader is configured to spread out at least some of the thermal energy and to provide the spread-out thermal energy to the second encapsulation layer. The heat sink is configured to receive the thermal energy through the second encapsulation layer and to transfer the thermal energy out of the module base. The first encapsulation layer includes multiple openings. The module base includes multiple tabs inserted through the openings. Each tab is configured to provide a thermal interface between at least one of the device(s) and the thermal spreader through the first encapsulation layer.

Abstract: Flexible substrates including a polymer selected from a thermoplastic polymer, a thermoset polymer, and/or a polymer blend, and ferroelectric perovskite-type oxide particles dispersed in the polymer, where the ferroelectric perovskite-type oxide has a dielectric constant that varies with applied voltage. The flexible substrates can be used in tunable electronics.

Abstract: Systems and methods described herein are provided for electrically coupling conductors within a multilayered printed circuit board (PCB) using an interconnect formed along an outer surface of one or more stripline boards making up the multilayered PCB. The multilayered PCB may include first and second stripline boards each having multiple dielectric layers. A first conductor may be formed in the first stripline between the multiple dielectric layers and a second conductor may be formed in the second stripline between the multiple dielectric layers. The interconnect may be formed over an outer surface the dielectric layers such that the interconnect extends from the first conductor to the second conductor. An electrically conductive wall may be formed over the edge or side portion of the dielectric layers to form a cavity that encloses the interconnect and the outer surface of the multilayered PCB.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A tunable electromagnetic device includes at least two overlapping metamaterial layers, wherein the metamaterial layers are selectively tunable by patterned conductive structures that are parts of the metamaterial layers. By selectively altering the properties of the metamaterial layers with the patterned conductive structures, the frequency response of the electromagnetic device can be controlled, to selectively let electromagnetic energy of certain frequencies pass through, or alternatively to prevent pass-through of substantially all frequencies of electromagnetic energy. In addition the frequencies for which electromagnetic energy passes through may be altered by controlling one or more of the tunable metamaterial layers. The tunable electromagnetic device may be used to selectively shield radar or other types of sensors, for example being used as all or part of the skin of a vehicle or other object.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A metamaterial radome/isolator system includes a radiation source for providing a radiation beam through the radome/isolator having a frequency beyond the bandgap region where the metamaterial permittivity and permeability are both positive and the metamaterial medium has a low, matched relative permittivity and relative permeability.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A metamaterial radome/isolator system includes a radiation source for providing a radiation beam through the radome/isolator having a frequency beyond the bandgap region where the metamaterial permittivity and permeability are both positive and the metamaterial medium has a low, matched relative permittivity and relative permeability.

Abstract: A combined thermoelectric/photovoltaic device features a photovoltaic cell with a common electrode, an electrically insulative, thermally conductive layer applied to the common electrode, and an array of thermoelectric couples each including a p-type semiconductor element and an n-type semiconductor element. There is an electrically conductive bridge for each thermoelectric couple formed on the electrically insulative thermally conductive layer. Methods of making such a hybrid device also including a heat sink are also disclosed.

Abstract: A combined thermoelectric/photovoltaic device features a photovoltaic cell with a common electrode, an electrically insulative, thermally conductive layer applied to the common electrode, and an array of thermoelectric couples each including a p-type semiconductor element and an n-type semiconductor element. There is an electrically conductive bridge for each thermoelectric couple formed on the electrically insulative thermally conductive layer. Methods of making such a hybrid device also including a heat sink are also disclosed.