Patents by Inventor Maryse Gazard
Maryse Gazard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 4853258Abstract: The invention pertains to a method for metallic coating according to which the fiber is made to pass through a bath of molten metal. To prevent unevennesses in coating, caused by turbulence, a depression is made above the bath.The invention also pertains to a device by which the method is applied. The fiber goes vertically through a pot containing the molten metal above which the depression is made.The invention can be used to make optic fibers of greater mechanical strength.Type: GrantFiled: August 30, 1987Date of Patent: August 1, 1989Assignee: Thomson-CSFInventors: Jean Gombert, Christian Quinty, Maryse Gazard, Serge Blaison
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Patent number: 4572840Abstract: The method consists in twisting a fiber already coated with a primary coating about its axis of symmetry at a temperature less than the vitreous transition temperature of this fiber; in coating it with a polymer in the viscous state so as to form an envelope about this fiber; in curing said polymer while increasing its YOUNG's modulus.Type: GrantFiled: January 30, 1985Date of Patent: February 25, 1986Assignee: Thomson-CSFInventors: Jean Gombert, Serge Blaison, Christian Quinty, Maryse Gazard
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Patent number: 4508639Abstract: The polymer material is made from a first monomer and from a second monomer. The first monomer Ar includes at least one aromatic nucleus and the second monomer is a five links conjugated heterocyclic ring. The polymer material has the following general chemical formula: ##STR1## in which: X represents the group constituted by sulphur and selenium; R.sub.1 and R.sub.2 are chosen from the group constituted by hydrogen, and by the alkyl, alkoxyl, and hydroxyl groups; and n is the degree of polymerization. Such materials can be made conductive by adding a doping agent, and they can then be used for manufacturing electrodes, junctions, Schottky barriers, etc.Type: GrantFiled: May 23, 1983Date of Patent: April 2, 1985Assignee: Thomson-CSFInventors: Marcel Camps, Alain Douillard, Jean-Claude Dubois, Maryse Gazard, Jean-Pierre Montheard, Thierry Pascal, Gerard Seytre
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Patent number: 4502934Abstract: The invention relates to the elaboration of an electrode comprising an electrochrome polymer.The invention provides an electrode coated with a polymer film obtained by electrochemical polymerization of a monomer M, said polymer corresponding to the general formula (M.sup.+ X.sup.- y)n where X.sup.- represents an anion coming from the electrolyte used for the polymerization, the monomer being either a substituted aromatic heterocycle with 5 links containing a single hetero-atom, or an indole substituted on the phenyl nucleus, the substitutions being possibly groups of the alkyl, alkoxyl, hydroxyl, aryl, substituted aryl, halogene, trihalogenomethyl, cyano, amino or dialkylamino type.Type: GrantFiled: May 31, 1983Date of Patent: March 5, 1985Assignee: Thomson-CSFInventors: Maryse Gazard, G/e/ rard Tourillon, Francis Garnier
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Patent number: 4481132Abstract: The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.Type: GrantFiled: July 6, 1982Date of Patent: November 6, 1984Assignee: Thomson-CSFInventors: Jean C. Dubois, Maryse Gazard, Francois Schue, Louis Giral, Michel Rolland, Mahmoud Aldissi
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Patent number: 4414081Abstract: A family of negative resins, capable of undergoing crosslinking under the effect of more or less energetic photons (gamma radiation, X-rays, ultraviolet or visible light), applicable to the protection of objects against atmospheric agents and to the production of masks of the type used in the production of integrated circuits. The typical compound according to the invention contains at least one substance of which the chemical formula comprises a thiirane ring: ##STR1## such as 2,3-epithiopropyl methacrylate copolymerized with a vinyl monomer, such as methyl methacrylate. Crosslinking is facilitated by photoinitiators, such as aryl diazonium and aryl iodonium salts liberating Lewis acids. By selecting the photoinitiator, it is possible to act on the spectral region where irradiation is effective.Type: GrantFiled: November 6, 1981Date of Patent: November 8, 1983Assignee: Thomson - CSFInventors: Armand Eranian, Jean-Claude Dubois, Maryse Gazard, Francoise Barre
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Patent number: 4315067Abstract: A polymerized resin capable, upon electronic irradiation, of undergoing a cross-linking completing the polymerization and rendering it insoluble in certain solvents. Such a negative resin is ten times more sensitive to electrons than the best known resin. It is obtained by copolymerization of an epithiopropylmethacrylate: ##STR1## and of a vinyl monomer such as methyl methacrylate.Type: GrantFiled: July 9, 1980Date of Patent: February 9, 1982Assignee: Thomson-CSFInventors: Maryse Gazard, Armand Eranian, Francoise Barre, Claude Duchesne
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Patent number: 4285788Abstract: A family of negative resins, capable of undergoing crosslinking under the effect of more or less energetic photons (gamma radiation, X-rays, ultraviolet or visible light), applicable to the protection of objects against atmospheric agents and to the production of masks of the type used in the production of integrated circuits. The typical compound according to the invention contains at least one substance of which the chemical formula comprises a thiirane ring: ##STR1## such as 2,3-epithiopropyl methacrylate copolymerized with a vinyl monomer, such as methyl methacrylate. Crosslinking is facilitated by photoinitiators, such as aryl diazonium and aryl iodonium salts liberating Lewis acids. By selecting the photoinitiator, it is possible to act on the spectral region where irradiation is effective.Type: GrantFiled: August 20, 1979Date of Patent: August 25, 1981Assignee: Thomson-CSFInventors: Armand Eranian, Jean-Claude Dubois, Maryse Gazard, Francoise Barre
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Patent number: 4259162Abstract: A family of negative resins, capable of undergoing crosslinking under the effect of more or less energetic photons (gamma radiation, X-rays, ultraviolet or visible light), applicable to the protection of objects against atmospheric agents and to the production of masks of the type used in the production of integrated circuits. The typical compound according to the invention contains at least one substance of which the chemical formula comprises a thiirane ring: ##STR1## such as 2,3-epithiopropyl methacrylate copolymerized with a vinyl monomer, such as methyl methacrylate. Crosslinking is facilitated by photoinitiators, such as aryl diazonium and aryl iodonium salts liberating Lewis acids. By selecting the photoinitiator, it is possible to act on the spectral region where irradiation is effective.Type: GrantFiled: February 28, 1978Date of Patent: March 31, 1981Assignee: Thomson-CSFInventors: Armand Eranian, Jean-Claude Dubois, Maryse Gazard, Francoise Barre
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Patent number: 4195108Abstract: A process rendering certain electron masking resins more sensitive or rendering polymers which are unsufficiently sensitive to electrons suitable for industrial utilization, in particular for application to electron masking, a method which employs scanning with a very fine electron beam controlled by the computer. The process involves electron irradiation at low dose levels, sufficient however to create free radicals, followed by diffusion of an appropriate copolymerizing monomer by grafting to the initial polymeric chain opened by the irradiation process. The solubility of the copolymer vis-a-vis certain solvents is selective, enabling the masks to be developed.Type: GrantFiled: May 1, 1978Date of Patent: March 25, 1980Assignee: Thomson-CSFInventors: Maryse Gazard, Jean-Claude Dubois
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Patent number: 4153925Abstract: A dielectric thin layer consisting of polymerized perfluoro-2-butene:(C F.sub.3 -C F=C F-C F.sub.3).sub.npresenting very good characteristics for production of single or multi-layer capacitors, obtained with a rapid deposition by glow discharge in an a.c. electrical field. The glow discharge is carried out in the gaseous phase of perfluoro-2-butene under highly reduced pressure and an a.c. voltage of 300 volts, the maximum rate of layer formation (0.7 micron per minute) being obtained for a frequency of 13.56Mc/s, at a temperature of 0.degree. C. under a pressure of 0.1 Torr when the useful power of the glow discharge is of 5 to 10 watts.Type: GrantFiled: February 6, 1978Date of Patent: May 8, 1979Assignee: Thomson-CSFInventors: Maryse Gazard, Jean-Claude Dubois
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Patent number: 4068919Abstract: A method of manufacturing an electron-sensitive resin capable of constituting the material of an optical waveguide having a width of the order of 1 micron and transmission loss lower than 2 db/cm, is provided. The method comprises, carried out under conditions of extremely high purity, the hydrolysis of trichlorosilane, to give phenylsilanetriol, the preparation of a benzenic collodion of this product and then the polymerization in the hot state of a phenylsilanetriol solution, and the conversion of the resultant polymer into the polyphenylsiloxanol which is fractionated by successive extremely fine filtering operations carried out upon a solution of this product, into batches having different degrees of polymerization, each of them fitting a typical optical waveguide.Type: GrantFiled: March 9, 1976Date of Patent: January 17, 1978Assignee: Thomson-CSFInventors: Jean Claude Dubois, Maryse Gazard, Claude Duchesne, Jean Claude Lavenu
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Patent number: 4041190Abstract: A high precision silica coating, is provided. A thin film of a resin, from the polysiloxane group, for instance polyvinylsiloxane, is irradiated by 10,000 electron-volts. The resin converts in an insoluble product in the areas exposed according a predetermined pattern. After a heat treatment in oxidizing atmosphere, the remainder of the film is eliminated.Type: GrantFiled: December 13, 1974Date of Patent: August 9, 1977Assignee: Thomson-CSFInventors: Jean-Claude Dubois, Maryse Gazard
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Patent number: 3989354Abstract: A nematic liquid crystal device for electro-optical display devices, is provided. Its long-shaped molecules are orientated perpendicularly to the electrode plates delimiting the crystalline liquid, i.e. homeotropically aligned. A polymer layer with long-chain molecules has been previously formed on the internal faces of each plate separately arranged on a discharge electrode of an electrical apparatus operating at high frequency (13.56 mc/s) and containing a vapour at very low pressure of a monomer such as hexamethyldisiloxane. The molecules of polymer thus formed are perpendicular to the plates and a similar orientation of the liquid crystal molecules result from that, i.e. a homeotropic alignment.Type: GrantFiled: October 18, 1974Date of Patent: November 2, 1976Assignee: Thomson-CSFInventors: Jean Claude Dubois, Maryse Gazard, Annie Zann