Abstract: There is provided an optical filter capable of effectively transmitting ultraviolet light in a wavelength range from 220 nm to 225 nm while suppressing the transmission of ultraviolet light in a wavelength range from 240 nm to 320 nm. An optical filter 1 includes a transparent substrate 2 and a dielectric multilayer film 3 provided on the transparent substrate 2 and containing hafnium oxide. A minimum value of spectral transmittance in a wavelength range from 220 nm to 225 nm is 50% or more with an incident angle of 0 degrees, and a maximum value of spectral transmittance in a wavelength range from 240 nm to 320 nm is 5% or less with an incident angle of 0 degrees.

Abstract: Provided is an optical filter capable of reducing the dependency on the angle of light incidence. An optical filter 1 includes a hydrogenated silicon-containing film 4, wherein in a Raman spectrum of the hydrogenated silicon-containing film 4 measured by Raman spectroscopy a ratio (SiH/SiH2) obtained from a ratio between an area of a peak derived from SiH and an area of a peak derived from SiH2 is 0.7 or more.

Abstract: Provided is a film-covered transparent base plate having an excellent aesthetic appearance even during turn-off of a light source. A film-covered transparent base plate 1 includes a transparent base plate 2 and a light-absorbing film 3 provided on one principal surface 2a of the transparent base plate 2 and the light-absorbing film 3 includes a dielectric phase made of a material having a band gap of not less than 2.0 eV and not more than 2.7 eV and a metallic phase.

Abstract: Provided are: a band-pass filter for which filter characteristics can be improved; and a manufacturing method therefor. A band-pass filter 11, which allows light of a specific wavelength region to pass, includes: a substrate 12 which has light transmitting properties; a first dielectric multilayer film 13 that is provided on a first main surface S1 of the substrate 12; and a second dielectric multilayer film 14 that is provided on a second main surface S2 which is opposite the first main surface S1. The first dielectric multilayer film 13 contains a hydrogenated silicon layer. The second dielectric multilayer film 14 contains a hydrogenated silicon layer.

Abstract: An electrically-controlled optical device intended to be placed in front of a user's eye, the electrically-controlled optical device being an ophthalmic device, the electrically-controlled optical device comprising: a front shell defining a front surface and a back surface opposed to the front surface, the front shell comprising a slab, at least one functional layer arranged on the back surface and one primer layer, said primer layer being arranged between the at least one functional layer and the slab; and an electrically-controlled object facing the back surface of the front shell wherein the primer layer is conformed such that the electrically-controlled optical device is mechanically resistant to an impact energy of at least 200 mJ.

Abstract: Provided is a transparent conductive film formed of an indium tin oxide film, which has a value of (carrier mobility)/(carrier concentration) of 2×10?20 cm5/V/S or more and a value of (carrier mobility)×(carrier concentration) of 200×1020 cm?1/V/S or more.

Abstract: To provide a transparent electrode having high infrared light transmittance that is used in an optical communication device using infrared light, particularly infrared light near 1.55 ?m, the transparent electrode of the present invention includes a transparent conductive film, and the extinction coefficient of the transparent conductive film at a wavelength of 1.55 ?m is equal to or less than 0.5.

Abstract: An object of the present invention is to provide a multilayer film that can make large the amount of outgoing light from a liquid crystal device such as liquid crystal display element and liquid crystal aberration compensating element and at the same time, can realize a high contract in a liquid crystal display element. The multilayer film of the present invention is a multilayer film which is formed on an inner side of a transparent substrate and contains a transparent electrically-conductive film and an orientation film, in which an antireflection film is provided at least either between the transparent substrate and the transparent electrically-conductive film or between the transparent electrically-conductive film and the orientation film.

Abstract: Provided is a rare earth sintered magnet which can attain a high residual magnetic flux density without causing a drop in coercive force or mechanical strength. The above-described problems are resolved by a rare earth sintered magnet which includes a sintered body whose carbon amount as determined by mass spectrometry is between 500 and 1,500 ppm, wherein a cv-value of the carbon amount on a rupture plane thereof is no greater than 200. The production method for this rare earth sintered magnet includes the steps of: preparing a compacted body by compressing in a magnetic field a raw material alloy powder has a carbon amount of no greater than 1,200 ppm as determined by mass spectrometry, and a Cmax/Cmin value of 15 or less wherein Cmax and Cmin respectively represent a maximum value and a minimum value of X-ray intensity of characteristic X-rays of carbon as determined by EPMA (Electron Probe Micro Analyzer); and sintering the compacted body.

Abstract: A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.

Abstract: A ladder-type film bulk acoustic resonator (FBAR) filter comprises two series FBARs and two parallel FBARs. Each FBAR has a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top and bottom electrodes. The top electrodes of the two series FBARs form part of a signal line of a coplanar waveguide transmission line. The top electrodes of the two series FBARs are connected to associated circuitry. The two series FBARs have a common bottom electrode.

Abstract: Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a substrate (20) and connected to associated circuitry by one or more transmission lines formed on the substrate (20). The arrangement of the resonators (10, 11) between the ground and signal lines of a coplanar line structure provides a means of minimising the area of the filter. Embedding a ladder filter within the coplanar transmission line structure eliminates the need for wire bonds, thus simplifying fabrication. Embodiments for 2×2, and hither order filters are described.

Abstract: A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.

Abstract: A thin-film piezoelectric resonator including a piezoelectric thin film having piezoelectric characteristic, and an upper electrode and a lower electrode arranged on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film, wherein: each of the upper electrode and the lower electrode includes a resonant portion, and a lead-out portion; and the electrode thickness of at least one part of the lead-out portion in at least one of the upper electrode and the lower electrode is larger than the electrode thickness of the resonant portion formed to be continued from the lead-out portion.

Abstract: A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.

Abstract: A ladder-type film bulk acoustic resonator (FBAR) filter comprises two series FBARs and two parallel FBARs. Each FBAR has a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top and bottom electrodes. The top electrodes of the two series FBARs form part of a signal line of a coplanar waveguide transmission line. The top electrodes of the two series FBARs are connected to associated circuitry. The two series FBARs have a common bottom electrode.

Abstract: A thin-film piezoelectric resonator including a piezoelectric thin film having piezoelectric characteristic, and an upper electrode and a lower electrode arranged on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film, wherein: each of the upper electrode and the lower electrode includes a resonant portion, and a lead-out portion; and the electrode thickness of at least one part of the lead-out portion in at least one of the upper electrode and the lower electrode is larger than the electrode thickness of the resonant portion formed to be continued from the lead-out portion.

Abstract: Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a substrate (20) and connected to associated circuitry by one or more transmission lines formed on the substrate (20). The arrangement of the resonators (10, 11) between the ground and signal lines of a coplanar line structure provides a means of minimising the area of the filter. Embedding a ladder filter within the coplanar transmission line structure eliminates the need for wire bonds, thus simplifying fabrication. Embodiments for 2×2, and hither order filters are described.