Abstract: An immersion cleaning device is provided with concave portions housing respective chemical baths into which a workpiece is selectively immersed. Any gas and mist generated from the chemical baths is exhausted from the concave portions. A transportation element has a portion to hold a workpiece with takes the workpiece into or out from the chemical bath. A controller is included to control operation of transportation means. An enclosure body moves with the holding portion and is moved with the workpiece to substantially enclose any gases and chemical mist generated during the transportation. Corrosion of the device and pollution which might be caused by leaks of gases and mist to the outside are thus prevented.

Abstract: An apparatus for vertically carrying semiconductor wafers includes a pair of flexible endless belts, each having projections for forming horizontal, parallel shelves. The endless belts are supported by a support unit and are movable along endless loops. The endless belts are disposed with their shelves facing each other to define a vertical transfer path having an entrance and an exit. A drive unit drives the endless belts along the endless loops at equal speeds in the same direction within the vertical transfer path. The wafer carrying apparatus also comprises an entrance conveying unit disposed close to the entrance of the vertical transfer path for conveying a semiconductor wafer to the entrance and an exit conveying unit disposed close to the exit of the vertical transfer path for conveying a semiconductor wafer from the exit. The entrance and exit of the apparatus can be altered as desired by changing the operational modes of the endless belts and the conveying units.

Abstract: The interior of a chamber within which a target assembly is disposed is evacuated to remove residual impurity gases while heated water flows within the target assembly. When the internal pressure within the chamber drops belows a predetermined level, cooled water flows within the target assembly, and a film is formed on a semiconductor substrate placed within the chamber as the target assembly is being cooled by the cooled water. Gases contained in the ambient atmosphere around the chamber are prevented from being introduced into the chamber when the interior of the chamber is opened. It is also possible to prevent any condensation of vapor on the target assembly.

Abstract: The present invention relates to a semiconductor device which exposes a P-N junction portion in mesa groove to attain high reverse voltage blocking ability and a method of manufacturing the same. The mesa groove is provided in the form of a ring, and a section thereof is finished in positive bevel configuration being increased in width from a major surface toward an inner portion. Thus, a surface electric field of the mesa groove is weakened to attain high reverse voltage blocking ability, while the mesa groove of positive beveled structure can be accurately formed by employing a drill provided with a cutting edge having a mesa type sectional configuration.

Abstract: A method of fixing an insertion electrode panel in a compression-bonded semiconductor device, in which a screen (20) having a pattern portion (22a) is aligned on a semiconductor element (1) having an electrode pattern (3), which pattern portion (22a) is formed identically to the electrode pattern (3), a cold-setting silicon rubber solution is dropped on the screen to be attached on the electrode pattern, whereby an aligning pattern member (23) is formed in a projecting manner, and then the insertion electrode panel (4) is overlapped on the semiconductor element in alignment with the same with the pattern hole (5) fitted with the aligning pattern member, and is fixed to the same by attaching a passivation rubber member (6) on its outer circumferential portion.