Patents by Inventor Masaaki Yamagami

Masaaki Yamagami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5585214
    Abstract: An electrophotographic photosensitive member having a photosensitive layer formed on a supporting member and a protective layer formed on the photosensitive layer if necessary. At least one of the photosensitive layer and the protective layer is formed of a material containing a cured resin obtained by end-reactive curing of a polycarbonate having glycidyl end groups.
    Type: Grant
    Filed: December 27, 1994
    Date of Patent: December 17, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noboru Kashimura, Shoji Amamiya, Masaaki Yamagami
  • Patent number: 5484687
    Abstract: Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.
    Type: Grant
    Filed: July 29, 1993
    Date of Patent: January 16, 1996
    Assignee: Fujitsu Limited
    Inventors: Keiji Watanabe, Akira Oikawa, Shun-ichi Fukuyama, Masaaki Yamagami, Takahisa Namiki
  • Patent number: 5485250
    Abstract: An electrophotographic apparatus is disclosed which has an electrophotographic photosensitive member and a transfer device. The photosensitive member has a conductive support and a photosensitive layer, and further has a surface layer formed of a binder resin, fluorine atom- or silicon atom-containing compound particles incompatible with the binder resin, and a fluorine atom- or silicon atom-containing compound compatible with the binder resin. In the surface layer, the proportion of fluorine atoms and silicon atoms to carbon atoms, (F+Si)/C, as measured by X-ray photoelectron spectroscopy is 0.01 to 1.0. Additionally, the transfer device is a multiple-transfer device.
    Type: Grant
    Filed: August 11, 1994
    Date of Patent: January 16, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noboru Kashimura, Harumi Sakoh, Kazushige Nakamura, Shoji Amamiya, Takashige Kasuya, Haruyuki Tsuji, Masaaki Yamagami, Tatsuya Ikezue
  • Patent number: 5455135
    Abstract: An electrophotographic photosensitive member includes an electroconductive substrate, a photosensitive layer disposed on the electroconductive substrate, and a protective layer disposed on the photosensitive layer, the protective layer containing a resin formed by polymerization of compounds each having two or more ion polymerizable functional groups, and electroconductive particles.
    Type: Grant
    Filed: December 16, 1993
    Date of Patent: October 3, 1995
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akio Maruyama, Kazushige Nakamura, Shoji Amamiya, Shin Nagahara, Haruyuki Tsuji, Masaaki Yamagami, Michiyo Sekiya
  • Patent number: 5357320
    Abstract: An electrophotographic apparatus is disclosed which has an electrophotographic photosensitive member and a transfer member. The photosensitive member has a conductive support and a photosensitive layer, and further has a surface layer formed of a binder resin, fluorine atom- or silicon atom-containing compound particles incompatible with the binder resin, and a fluorine atom- or silicon atom-containing compound compatible with the binder resin. In the surface layer, the proportion of fluorine atoms and silicon atoms to carbon atoms, (F+Si)/C, as measured by X-ray photoelectron spectroscopy is 0.01 to 1.0. Additionally, the transfer member is a multiple-transfer member.
    Type: Grant
    Filed: September 2, 1993
    Date of Patent: October 18, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noboru Kashimura, Harumi Sakoh, Kazushige Nakamura, Shoji Amamiya, Takashige Kasuya, Haruyuki Tsuji, Masaaki Yamagami, Tatsuya Ikezue
  • Patent number: 5240813
    Abstract: Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.
    Type: Grant
    Filed: November 15, 1990
    Date of Patent: August 31, 1993
    Assignee: Fujitsu Limited
    Inventors: Keiji Watanabe, Akira Oikawa, Shun-ichi Fukuyama, Masaaki Yamagami, Takahisa Namiki