Abstract: Provided is a method for manufacturing a catalyst with which it is possible to obtain a supported metal ammonia synthesis catalyst, in which there are restrictions in terms of producing method and producing facility, and particularly large restrictions for industrial-scale producing, in a more simple manner and so that the obtained catalyst has a high activity. This method for manufacturing an ammonia synthesis catalyst includes: a first step for preparing 12CaO·7Al2O3 having a specific surface area of 5 m2/g or above; a second step for supporting a ruthenium compound on the 12CaO·7Al2O3; and a third step for performing a reduction process on the 12CaO·7Al2O3 supporting the ruthenium compound, obtained in the second step. This invention is characterized in that the reduction process is performed until the average particle diameter of the ruthenium after the reduction process has increased by at least 15% in relation to the average particle diameter of the ruthenium before the reduction process.

Abstract: An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.

Abstract: Disclosed is a patterned substrate having a conductor pattern. The conductor pattern is obtained by forming a layer (B) containing an organic polysilane on a conductive substrate (A), irradiating a certain region of the layer (B) with a radiation for oxidizing the organic polysilane constituting the layer (B) in the certain region, and then applying a solution containing a conducting polymer, water and/or a hydrophilic solvent over at least the certain region of the layer (B) for forming a layer (C) composed of the conducting polymer while impregnating the layer (B) in the certain region with the conducting polymer for electrically connecting the layer (C) and the substrate (A).

Abstract: An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.

Abstract: A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.

Abstract: A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.

Abstract: An organic light-light conversion device excellent in device characteristics, comprising a light sensing unit having a layer including a photo-conductive organic semiconductor developing a photo-current multiplication phenomenon by light irradiation, and a light emitting unit having a layer including an electroluminescent organic semiconductor emitting light by current injection, characterized in that at least one of the photo-conductive organic semiconductor and an electroluminescent organic semiconductor is polymer semiconductor. An imaging intensifier consisting of a plurality of arranged above organic light-light conversion devices. An optical sensor provided with a means of measuring and outputting voltages applied to the above organic light-light conversion device and to the opposite ends of a layer including the electroluminescent organic semiconductor.

Abstract: A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.

Abstract: An organic electroluminescence device having a light emitting layer between an anode and a cathode wherein the device has a layer (L) between said cathode and said light emitting layer so as to contact the cathode, and the layer (L) comprises an organic compound (A) containing an aromatic hydrocarbon ring or hetero ring and a carbonyl group and at least one metal (B) selected from alkaline earth metals and group III metals.

Abstract: Disclosed is a patterned substrate having a conductor pattern. The conductor pattern is obtained by forming a layer (B) containing an organic polysilane on a conductive substrate (A), irradiating a certain region of the layer (B) with a radiation for oxidizing the organic polysilane constituting the layer (B) in the certain region, and then applying a solution containing a conducting polymer, water and/or a hydrophilic solvent over at least the certain region of the layer (B) for forming a layer (C) composed of the conducting polymer while impregnating the layer (B) in the certain region with the conducting polymer for electrically connecting the layer (C) and the substrate (A).

Abstract: An organic semiconductor film that can be used for an electron device, for example, particularly can be used for organic TFTs so as to allow the TFTs to have advanced performance, is provided and a manufacturing method therefor is provided. For instance, the organic semiconductor film contains the organic conductive high polymer compound such as polythiophene represented by the below formula (I). The organic semiconductor film is formed by forming a solution in a thin film form, the solution showing two or more spectral peaks (spectral state B) in a wavelength region of 300 to 800 nm by measurement using a visible and ultraviolet absorption spectral method; and drying the solution formed in the thin film form. Alternatively, the organic semiconductor film can be formed by the method in which the organic conductive high polymer compound has a molecular weight distribution range Mw/Mn from 1.00 to 1.85, obtained by dividing a weight-average molecular weight Mw by a number-average molecular weight Mn.

Abstract: A complex composition characterized by comprising a polymer having repeating units represented by the formula (1) and a metal complex which luminesces in its triplet excited state; and a polymer complex compound characterized by comprising repeating units represented by the formula (1) and a metal complex structure which luminesces in its triplet excited state and by emitting visible light in a solid state. (1) (Ar1 and Ar2 each independently represents a trivalent aromatic hydrocarbon group or trivalent heterocyclic group; Ar3 represents an aromatic hydrocarbon group or heterocyclic group, provided that the ring Ar3 has bonded thereto one or more groups selected from the group consisting of alkyl, alkoxy, alkylthio, alkylsilyl, alkylamino, aryl, aryloxy, arylalkyl, arylalkoxy, arylalkenyl, arylalkynyl, arylamino, monovalent heterocyclic groups, and cyano; and X represents a single bond or connecting group.

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: Organic semiconductor layers (2, 4) are laminated sandwiching an insulator thin layer (3), and translucent electrodes (1, 5) are formed on the surfaces of the organic semiconductor layers (2, 4), respectively. While a voltage is applied so that the electrode (1) is positive with respect to the electrode (5) and the opposite surfaces of the device are irradiated with two lights (6, 7) simultaneously, photocurrent multiplication is occurred to allow a photocurrent to flow in the device. However, no photocurrent multiplication occurs to allow no flow of photocurrent when the device is irradiated with one of the lights (6, 7).

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: The present invention provides a method for extracting a lipid mixture having a high percentage of phospholipids comprising polyunsaturated fatty acids. The method comprises the steps of (a) heating the viscera of fish with hot water or steam; and (b) extracting from the heated viscera of fish, using a solvent, the lipid mixture containing phospholipids comprising polyunsaturated fatty acids. The lipid mixture obtained by the present method contains phosphatidylserine comprising docosahexaenoic acid and phosphatidylethanolamine comprising docosahexaenoic acid in high concentration.

Abstract: An organic light-light conversion device excellent in device characteristics, comprising a light sensing unit having a layer including a photo-conductive organic semiconductor developing a photo-current multiplication phenomenon by light irradiation, and a light emitting unit having a layer including an electroluminescent organic semiconductor emitting light by current injection, characterized in that at least one of the photo-conductive organic semiconductor and an electroluminescent organic semiconductor is polymer semiconductor. An imaging intensifier consisting of a plurality of arranged above organic light-light conversion devices. An optical sensor provided with a means of measuring and outputting voltages applied to the above organic light-light conversion device and to the opposite ends of a layer including the electroluminescent organic semiconductor.

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: An indium electrode film (2) is formed closely adhering to one face of an organic semiconductor film (1) made of copper phthalocyanine while a gold electrode film (3) is formed on the other face. A voltage is applied to the organic semiconductor film (1) so that the indium electrode (2) side is biased positively. By applying a voltage so that the electrode (2) side is charged positively and irradiating with a light having a wavelength absorbable by the organic semiconductor film (1) the phenomenon of photocurrent multiplication arises at the interface of the organic semiconductor film (1) and the electrode (2). When put under an oxygen or moisture atmosphere in the above state, this gas sensor can detect oxygen or moisture depending on a change in photocurrent due to the multiplication.

Abstract: A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.