Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

Abstract: A transparent substrate with a laminated film, which comprises a transparent substrate and a laminated film formed on at least one surface of the transparent substrate, wherein the laminated film has a first dielectric layer, a crystallinity-improving layer, a functional layer and a second dielectric layer in this order from the transparent substrate side, the crystallinity-improving layer contains ZrNx (wherein x is higher than 1.2 and at most 2.0), the functional layer contains at least one metal nitride selected from the group consisting of titanium nitride, chromium nitride, niobium nitride, molybdenum nitride and hafnium nitride, and the concentration of oxygen atoms at a boundary between the crystallinity-improving layer and the functional layer, is at most 20 atom %.

Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

Abstract: A transparent substrate with a laminated film, which comprises a transparent substrate and a laminated film formed on at least one surface of the transparent substrate, wherein the laminated film has a first dielectric layer, a crystallinity-improving layer, a functional layer and a second dielectric layer in this order from the transparent substrate side, the crystallinity-improving layer contains ZrNx (wherein x is higher than 1.2 and at most 2.0), the functional layer contains at least one metal nitride selected from the group consisting of titanium nitride, chromium nitride, niobium nitride, molybdenum nitride and hafnium nitride, and the concentration of oxygen atoms at a boundary between the crystallinity-improving layer and the functional layer, is at most 20 atom %.