Abstract: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses.

Abstract: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses.

Abstract: The present invention provides a semi-transmissive liquid crystal display device that can suppress flicker by adjusting an optimum value of a direct-current offset voltage that is applied to offset a bias electric field generated inside liquid crystal without increasing the number of production steps, and also provides a preferable production method of the semi-transmissive liquid crystal display device. The liquid crystal display device of the present invention is a semi-transmissive liquid crystal display device including: a substrate on aback face side, including a transmissive electrode and a reflective electrode; a substrate on an observation face side, facing the substrate on the back face side; and a liquid crystal layer arranged between the substrate on the back face side and the substrate on the observation face side, wherein the reflective electrode has a molybdenum-containing surface on a side of the liquid crystal layer.

Abstract: The substrate (10) of the present invention includes: a first electrode (26) and a second electrode (30). The second electrode (30) is formed on an insulation film (52) covering at least a part of the first electrode (26) and electrically connected with the first electrode (26) through a contact hole (50) formed in the insulation film (52). The first electrode (26) includes a laminated structure of a metal film (42) and a protective film (44). An etching rate of the metal film (42) is almost equal to an etching rate of the protective film (44) with respect to a first etching for forming the metal film (42) and the protective film (44). An etching rate of the protective film (44) is almost zero with respect to a second etching for forming the contact hole (50).

Abstract: A thin film transistor (TFT) is formed on an insulating substrate, and a photosensitive resin film as an interlayer insulating film is formed so as to cover the TFT. Contact holes are formed in the photosensitive resin, and smooth concave and convex portions are provided on an upper surface of the resin. A film including molybdenum nitride (MoN) and a reflective pixel electrode film are successively laminated on the photosensitive resin. The nitrogen content in the MoN film may be between 5 atomic % and 30 atomic % inclusive.

Abstract: The substrate (10) of the present invention includes: a first electrode (26) and a second electrode (30). The second electrode (30) is formed on an insulation film (52) covering at least a part of the first electrode (26) and electrically connected with the first electrode (26) through a contact hole (50) formed in the insulation film (52). The first electrode (26) includes a laminated structure of a metal film (42) and a protective film (44). An etching rate of the metal film (42) is almost equal to an etching rate of the protective film (44) with respect to a first etching for forming the metal film (42) and the protective film (44). An etching rate of the protective film (44) is almost zero with respect to a second etching for forming the contact hole (50).

Abstract: The etching composition of the invention is capable of simultaneously etching the films of a three-layered laminate film comprising an uppermost amorphous transparent electrode film made of IZO, etc., an intermediate reflective electrode film made of Al, etc. and a lowermost galvanic corrosion-inhibiting film made of Mo, etc. or a two-layered laminate film comprising an upper amorphous transparent electrode film and a lower reflective electrode film by a sole use thereof in a single etching operation to provide an etched laminate film having an edge of a good normal-tapered or stepwise shape. The etching composition comprises an aqueous water containing 30 to 40% by weight of phosphoric acid, 15 to 35% by weight of nitric acid, an organic acid and a cation-generating component.

Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.

Abstract: A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.