Abstract: The present invention enables automatic detection of failure in a plunger in a syringe pump unit by an automated analysis device, which includes a sample dispensing mechanism; a reagent dispensing mechanism; and a control unit for controlling operation of the sample dispensing mechanism and the reagent dispensing mechanism and analyzing the sample. The sample dispensing mechanism and the reagent dispensing mechanism each have a plunger for suctioning in and expelling liquid, and a plunger drive unit for driving the plunger. The control unit controls operation with the plunger drive unit of the reagent dispensing mechanism so that the plunger moves reciprocally by a backlash distance a predetermined number of times. Failure of the plunger is detected by detecting, using the liquid level sensing function, the amount of liquid discharged into the liquid storage container.

Abstract: A manufacturing apparatus of a semiconductor device includes a stage, a mounting tool, a pressing mechanism, and a controller. The pressing mechanism moves the mounting tool in a vertical direction and applies a load to a chip. The controller is configured to perform a first process and a detection process. In the first process, after bringing the chip into contact and until a bump melts, the chip is heated by the mounting tool and a command position of the pressing mechanism is constantly updated so that a positional deviation is constant. In the detection process, melting of the bump is detected based on a decrease in the pressing load.

Abstract: Split memory cells can be provided within an alternating stack of insulating layers and word lines. At least one lower-select-gate-level electrically conductive layers and/or at least one upper-select-level electrically conductive layers without a split memory cell configuration can be provided by limiting the levels of separator insulator structures within the levels of the word lines. At least one etch stop layer can be formed above at least one lower-select-gate-level spacer material layer. An alternating stack of insulating layers and spacer material layers is formed over the at least one etch stop layer. Separator insulator structures are formed through the alternating stack employing the etch stop layer as a stopping structure. Upper-select-level spacer material layers can be subsequently formed. The spacer material layers and the select level material layers are formed as, or replaced with, electrically conductive layers.

Abstract: An alternating stack of sacrificial material layers and insulating layers is formed over a substrate. Replacement of sacrificial material layers with electrically conductive layers can be performed employing a subset of openings. A predominant subset of the openings is employed to form memory stack structures therein. A minor subset of the openings is employed as access openings for introducing an etchant to remove the sacrificial material layers to form lateral recesses and to provide a reactant for depositing electrically conductive layers in the lateral recesses. By distributing the access openings across the entirety of the openings and eliminating the need to employ backside trenches for replacement of the sacrificial material layers, the size and lateral extent of backside trenches can be reduced to a level sufficient to accommodate only backside contact via structures.

Abstract: A vertical memory device including dual memory cells per level in each memory opening can have dielectric separator dielectric structures that protrude into a facing pair of sidewalls of the memory stack structure within the memory opening. A pair of inactive sections of a vertical semiconductor channel facing the dielectric separator dielectric structures is laterally recessed from control gate electrodes. Control of the threshold voltage of such a vertical memory device can be enhanced because of the dielectric separator dielectric structures. The fringe field from the control gate electrodes is weaker due to an increased distance between the control gate electrodes and the inactive sections of the vertical semiconductor channel. The memory stack structure can have concave sidewalls that contact the dielectric separator dielectric structures and convex sidewalls that protrude toward the control gate electrodes.

Abstract: An alternating stack of sacrificial material layers and insulating layers is formed over a substrate. Replacement of sacrificial material layers with electrically conductive layers can be performed employing a subset of openings. A predominant subset of the openings is employed to form memory stack structures therein. A minor subset of the openings is employed as access openings for introducing an etchant to remove the sacrificial material layers to form lateral recesses and to provide a reactant for depositing electrically conductive layers in the lateral recesses. By distributing the access openings across the entirety of the openings and eliminating the need to employ backside trenches for replacement of the sacrificial material layers, the size and lateral extent of backside trenches can be reduced to a level sufficient to accommodate only backside contact via structures.

Abstract: Split memory cells can be provided within an alternating stack of insulating layers and word lines. At least one lower-select-gate-level electrically conductive layers and/or at least one upper-select-level electrically conductive layers without a split memory cell configuration can be provided by limiting the levels of separator insulator structures within the levels of the word lines. At least one etch stop layer can be formed above at least one lower-select-gate-level spacer material layer. An alternating stack of insulating layers and spacer material layers is formed over the at least one etch stop layer. Separator insulator structures are formed through the alternating stack employing the etch stop layer as a stopping structure. Upper-select-level spacer material layers can be subsequently formed. The spacer material layers and the select level material layers are formed as, or replaced with, electrically conductive layers.

Abstract: A vertical memory device including dual memory cells per level in each memory opening can have dielectric separator dielectric structures that protrude into a facing pair of sidewalls of the memory stack structure within the memory opening. A pair of inactive sections of a vertical semiconductor channel facing the dielectric separator dielectric structures is laterally recessed from control gate electrodes. Control of the threshold voltage of such a vertical memory device can be enhanced because of the dielectric separator dielectric structures. The fringe field from the control gate electrodes is weaker due to an increased distance between the control gate electrodes and the inactive sections of the vertical semiconductor channel. The memory stack structure can have concave sidewalls that contact the dielectric separator dielectric structures and convex sidewalls that protrude toward the control gate electrodes.

Abstract: The present invention relates to a process for producing a cationic hydroxypropyl cellulose including the step of reacting a low-crystalline powdery cellulose with a cationizing agent represented by the following general formula (1) and/or a cationizing agent represented by the following general formula (2), and propylene oxide in the presence of water in an amount of from 10 to 60% by mass on the basis of the low-crystalline powdery cellulose, and a catalyst: wherein R1 to R3 are each independently a linear or branched hydrocarbon group having 1 to 4 carbon atoms; and X and Z are each a halogen atom and may be the same or different from each other.

Abstract: The invention provides porous particles, a process for producing the porous particles, and cosmetics comprising the porous particles. The porous particles of the invention have an average particle diameter of 75 ?m or less, based on polyethylene resin having a crystallization degree of 70% or more. The porous particles further comprise an active ingredient. The process for producing the porous particles, comprises mixing polyethylene resin having a crystallization degree of 70% or more, and a low-molecular weight compound having a melting point lower than the softening temperature (or melting point) of the polyethylene resin, with each other at a temperature not lower than the softening temperature (or melting point) of the polyethylene resin, then spraying the mixture into a gaseous phase or a solvent at a temperature at which the viscosity of the mixture becomes 600 mPa·s or less, and removing the low-molecular weight compound from the resulting particles.

Abstract: Disclosed is a deodorant particle having a BET specific surface area of 10 m2/g or more that are obtained by copolymerizing a monomer system including a crosslinkable vinyl monomer and a vinyl monomer having a heteroaromatic ring. The deodorant particles may contain a metal ion. Also disclosed is a process of producing the deodorant particles including the step of copolymerizing a monomer system containing a crosslinkable vinyl monomer and a vinyl monomer having a heteroaromatic ring by oil-in-water emulsion polymerization or precipitation polymerization using an organic solvent whose solubility parameter is different from that of the monomers by an absolute difference of 0 to 2.0. The process can further include the step of bringing the particles obtained by the polymerization into contact with a solvent having a metal salt dissolved therein to support a metal ion on the particle.

Abstract: The present invention relates to a process for producing a cationic hydroxypropyl cellulose including the step of reacting a low-crystalline powdery cellulose with a cationizing agent represented by the following general formula (1) and/or a cationizing agent represented by the following general formula (2), and propylene oxide in the presence of water in an amount of from 10 to 60% by mass on the basis of the low-crystalline powdery cellulose, and a catalyst: wherein R1 to R3 are each independently a linear or branched hydrocarbon group having 1 to 4 carbon atoms; and X and Z are each a halogen atom and may be the same or different from each other.

Abstract: The invention relates to a highly productive process for producing decrystallized cellulose which includes treating a cellulose-containing raw material by means of a mill, wherein the cellulose-containing raw material has a cellulose content of a residue obtained by removing water from the cellulose-containing raw material of 20 mass % or more, has a cellulose I-type crystallinity of cellulose more than 33% as calculated from the following formula (1): Cellulose I-type Crystallinity (%)=[(I22.6?I18.5)/I22.6]×100??(1), wherein I22.6 is a diffraction intensity of a lattice plane (002 plane) as measured at a diffraction angle 2? of 22.6° in X-ray diffraction analysis; and I18.5 is a diffraction intensity of an amorphous moiety as measured at a diffraction angle 2? of 18.5° in X-ray diffraction analysis, and has a water content of 1.8 mass % or less, to thereby reduce the cellulose I-type crystallinity to 33% or less.

Abstract: The invention provides a composite particle, a process for producing the same, and cosmetics containing the same The invention relates to composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide and obtained by hot melt microencapsulation or spray cooling, or composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide, wherein the degree of remaining zinc oxide in the particles is 50 wt % or more after being dipped for 1 hour in 0.5 mol/L hydrochloric acid solution at 25° C. (solution composition: water and ethanol in equal volumes), a process for producing the composite particles, and cosmetics containing the composite particles.

Abstract: Disclosed is a deodorant particle having a BET specific surface area of 10 m2/g or more that are obtained by copolymerizing a monomer system including a crosslinkable vinyl monomer and a vinyl monomer having a heteroaromatic ring. The deodorant particles may contain a metal ion. Also disclosed is a process of producing the deodorant particles including the step of copolymerizing a monomer system containing a crosslinkable vinyl monomer and a vinyl monomer having a heteroaromatic ring by oil-in-water emulsion polymerization or precipitation polymerization using an organic solvent whose solubility parameter is different from that of the monomers by an absolute difference of 0 to 2.0. The process can further include the step of bringing the particles obtained by the polymerization into contact with a solvent having a metal salt dissolved therein to support a metal ion on the particle.

Abstract: The present invention provides a composite particle containing a paraffin wax with (1) a proteolytic enzyme and (1e) at least one enzyme activity stabilizer selected from borates, proteins, polyhydric alcohols and water-soluble polymers, or with (2) an amylolytic enzyme and (2e) at least one enzyme activity stabilizer selected from polyhydric alcohols, nonionic surfactants and water-soluble polymers, a detergent composition containing the composite particle, and a process for preparing the composite particle containing mixing the paraffin wax, the proteolytic enzyme, and the enzyme activity stabilizer, setting a temperature of a mixture to a softening temperature (or melting point) of the paraffin wax or more, and subjecting the mixture to cooling solidification to granulate.

Abstract: A semiconductor device has p-channel field effect transistors disposed in a lattice shape. In order to generate compression stress in the channel of a p-channel field effect transistor, a long active region of a plurality of transistors is divided for each gate electrode and a sufficiently thin shallow trench isolation (STI) is formed between adjacent gate electrodes. The drain current characteristics can be improved.

Abstract: The invention provides porous particles having a small particle diameter of 75 ?m or less on the average, the porous particles further containing an active ingredient, a process for producing the porous particles, and cosmetics containing the porous particles.

Abstract: The invention provides a composite particle, a process for producing the same, and cosmetics containing the same The invention relates to composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide and obtained by hot melt microencapsulation or spray cooling, or composite particles containing a polyolefin-based resin having a crystallization degree of 80% or less and zinc oxide, wherein the degree of remaining zinc oxide in the particles is 50 wt % or more after being dipped for 1 hour in 0.5 mol/L hydrochloric acid solution at 25° C. (solution composition: water and ethanol in equal volumes), a process for producing the composite particles, and cosmetics containing the composite particles.

Abstract: A semiconductor device has p-channel field effect transistors disposed in a lattice shape. In order to generate compression stress in the channel of a p-channel field effect transistor, a long active region of a plurality of transistors is divided for each gate electrode and a sufficiently thin STI is formed between adjacent gate electrodes. The drain current characteristics can be improved.