Abstract: A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.

Abstract: Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.

Abstract: A dielectric board (20) is arranged on a ceiling surface, which is of a processing container (2) and faces a susceptor (3), a slot antenna (30) having a plurality of slots (33) which pass through microwaves is arranged on an upper surface of the dielectric board (20), and a protruding member (21), which is composed of a member different from the dielectric board (20) and eliminates abnormal discharge, is provided on a lower peripheral section of the dielectric board (20). A field strength at the peripheral section of the dielectric board (20) is controlled by adjusting a space between an outer circumference surface (22) of a cylindrical section of the protruding member (21) and a side wall inner circumference surface (5a) of the processing container (2) or adjusting the thickness of the cylindrical section of the protruding member (21).

Abstract: Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.