Abstract: There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.

Abstract: Provided at low cost is a multi-quantum well solar cell such that recombination of carriers generated by light absorption is suppressed and a high photoelectric conversion efficiency is achieved. This multi-quantum well solar cell comprises a substrate, a p-type semiconductor layer, a barrier layer, a well layer, an n-type semiconductor layer, and electrodes, and is characterized in that the barrier layer and the well layer comprise crystals having a wurtzite crystal structure, the well layer is composed of a metal-oxynitride that comprises Zn and at least one element selected from a group consisting of In, Ga, and Al, and a piezoelectric electric field is generated in the well layer. This allows for the provision of a multi-quantum well solar cell such that recombination of carriers generated by light absorption is suppressed and a high photoelectric conversion efficiency is achieved.

Abstract: Provided is a plasma oxidation-reduction method with which it is possible to control the structure of amino acids and proteins with high and stable reproducibility, by using plasma in order to control the amino acids and proteins that make up a living body, particularly by using plasma in order to oxidize or reduce amino acids and proteins. Also provided are a method for promoting plant/animal growth using the plasma oxidation-reduction method, and a plasma-generating device for use in the method for promoting plant/animal growth. Amino acids or proteins are oxidized or reduced in the plasma oxidation-reduction method by using an active oxygen species or active hydrogen in the plasma. Preferably, the active oxygen species comprises any one of singlet oxygen atoms, excited oxygen molecules, or hydroxyl radicals, and the active hydrogen comprises excited hydrogen atoms.

Abstract: The intention is to clarify characteristics of a cluster-free amorphous silicon film which is practically produceable without incorporation of large clusters having a size of 1 nm or more, and provide a method and an apparatus for producing the amorphous silicon film. In the cluster-free amorphous silicone (a-Si:H) film, an in-film Si—H2 bond density is 10?2 atomic % or less, and an in-film volume fraction of the large clusters is 10?1% or less. The a-Si:H film is produced by depositing, on a substrate, a deposition material in a plasma flow of any one of a silane gas, a disilane gas and a gas obtained by diluting a silane or disilane gas with one or a combination of two or more selected from the group consisting of hydrogen, Ar, He, Ne and Xe. The a-Si:H film has prominent characteristics, such that: a light-induced defect density is reduced from 2×1016 cm?3 or more in conventional a-Si:H films to substantially zero; a stabilized efficiency (%), i.e.

Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.

Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.