Patents by Inventor Masahide Iwakata
Masahide Iwakata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220000453Abstract: An ultrasonic transducer element according to an embodiment includes a plurality of layers including a piezoelectric element layer. At least one surface of electrodes that forms a pair of adjacent layers among the plurality of layers is made of metal including a plurality of needle-like structures, the pair of adjacent layers being made of conductive material and facing each other.Type: ApplicationFiled: May 28, 2021Publication date: January 6, 2022Applicant: CANON MEDICAL SYSTEMS CORPORATIONInventors: Masahide IWAKATA, Junri ISHIKURA
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Patent number: 8585220Abstract: Provided is a method of producing an optical element, including: forming a frame portion on a substrate and forming a structural body in a space portion surrounded by the frame portion to thereby form a first optical member; disposing a second optical member on the first optical member in a reduced pressure environment to form an optical element in which the space portion is sealed in a pressure-reduced state; and exposing the optical element to the atmosphere to thereby bring the structural body and the second optical member into close contact with each other by a differential pressure between the atmosphere and the space portion sealed in the pressure-reduced state. Accordingly, it is possible to, when the optical element is bonded, suppress damage to the optical element during the bonding and further improve the function and strength of the optical element without use of an adhesive.Type: GrantFiled: May 26, 2009Date of Patent: November 19, 2013Assignee: Canon Kabushiki KaishaInventors: Masahide Iwakata, Kazuhiro Arai, Junji Terada
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Patent number: 8305686Abstract: A method for producing an optical element having a three-dimensional structural part that can resolve problems associated with deterioration of optical characteristics that is caused by variations in the element shape in the conventional process and poor endurance caused by insufficient joining strength and the optical element produced by the method are provided. A method for producing an optical element configured by joining at least a first optical member and a second optical member formed from an oxide material includes the processes of forming a refractive index periodic structural part with a period equal to or less than a visible light wavelength on at least one of the first optical member and the second optical member, forming a joining layer composed of an oxygen-deficient oxide on the first optical member and the second optical member, tightly joining the first optical member and the second optical member by the joining layer, and oxidizing the joining layer after the tight joining.Type: GrantFiled: July 28, 2009Date of Patent: November 6, 2012Assignee: Canon Kabushiki KaishaInventors: Kazuhiro Arai, Junji Terada, Masahide Iwakata
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Patent number: 8007964Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: GrantFiled: February 19, 2010Date of Patent: August 30, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Publication number: 20110032613Abstract: Provided is a method of producing an optical element, including: forming a frame portion on a substrate and forming a structural body in a space portion surrounded by the frame portion to thereby form a first optical member; disposing a second optical member on the first optical member in a reduced pressure environment to form an optical element in which the space portion is sealed in a pressure-reduced state; and exposing the optical element to the atmosphere to thereby bring the structural body and the second optical member into close contact with each other by a differential pressure between the atmosphere and the space portion sealed in the pressure-reduced state. Accordingly, it is possible to, when the optical element is bonded, suppress damage to the optical element during the bonding and further improve the function and strength of the optical element without use of an adhesive.Type: ApplicationFiled: May 26, 2009Publication date: February 10, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Masahide Iwakata, Kazuhiro Arai, Junji Terada
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Patent number: 7771893Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: GrantFiled: July 20, 2006Date of Patent: August 10, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Publication number: 20100143831Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: ApplicationFiled: February 19, 2010Publication date: June 10, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 7691546Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: GrantFiled: September 8, 2005Date of Patent: April 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Publication number: 20100020397Abstract: A method for producing an optical element having a three-dimensional structural part that can resolve problems associated with deterioration of optical characteristics that is caused by variations in the element shape in the conventional process and poor endurance caused by insufficient joining strength and the optical element produced by the method are provided. A method for producing an optical element configured by joining at least a first optical member and a second optical member formed from an oxide material includes the processes of forming a refractive index periodic structural part with a period equal to or less than a visible light wavelength on at least one of the first optical member and the second optical member, forming a joining layer composed of an oxygen-deficient oxide on the first optical member and the second optical member, tightly joining the first optical member and the second optical member by the joining layer, and oxidizing the joining layer after the tight joining.Type: ApplicationFiled: July 28, 2009Publication date: January 28, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Kazuhiro Arai, Junji Terada, Masahide Iwakata
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Patent number: 7625676Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.Type: GrantFiled: October 21, 2005Date of Patent: December 1, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima
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Patent number: 7618753Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).Type: GrantFiled: August 10, 2005Date of Patent: November 17, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 7598004Abstract: For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.Type: GrantFiled: March 30, 2005Date of Patent: October 6, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga, Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Yuichi Fukushima
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Patent number: 7556892Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.Type: GrantFiled: March 30, 2005Date of Patent: July 7, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Mikio Takagi, Yuichi Fukushima, Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga
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Publication number: 20090057143Abstract: A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.Type: ApplicationFiled: October 28, 2008Publication date: March 5, 2009Inventors: Hiroki YOSHIKAWA, Toshinobu ISHIHARA, Satoshi OKAZAKI, Yukio INAZUKI, Tadashi SAGA, Kimihiro OKADA, Masahide IWAKATA, Takashi HARAGUCHI, Yuichi FUKUSHIMA
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Publication number: 20080063950Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: ApplicationFiled: September 8, 2005Publication date: March 13, 2008Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Publication number: 20070259276Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).Type: ApplicationFiled: August 10, 2005Publication date: November 8, 2007Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Publication number: 20070020534Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: ApplicationFiled: July 20, 2006Publication date: January 25, 2007Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Publication number: 20060088774Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.Type: ApplicationFiled: October 21, 2005Publication date: April 27, 2006Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima
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Publication number: 20050244722Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.Type: ApplicationFiled: March 30, 2005Publication date: November 3, 2005Applicants: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Mikio Takagi, Yuichi Fukushima, Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga
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Publication number: 20050217988Abstract: For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.Type: ApplicationFiled: March 30, 2005Publication date: October 6, 2005Applicants: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga, Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Yuichi Fukushima