Patents by Inventor Masahide Oshita

Masahide Oshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Intermetallic compound semiconductor thin film and method of manufacturing same
    Patent number: 4874438
    Abstract: An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: October 17, 1989
    Assignee: Toyo Communication Equipment Co., Ltd.
    Inventors: Masahide Oshita, Masaaki Isai, Toshiaki Fukunaka