Abstract: A method for manufacturing a molded product of the present disclosure includes a deposition step of depositing a mixture including a fiber and starch in air, a humidification step of applying water to the mixture, and a molding step of heating and pressurizing the mixture applied with water to obtain a molded product. The starch has a gelatinized and then pulverized particle diameter d50 of 0.30 mm or more and 1.0 mm or less, which is the average particle diameter of the finely pulverized product determined by a prescribed measuring method.

Abstract: A sliver for spinning having a deodorizing and/or heat-generating moisture absorption function is provided, where a sliver for spinning formed as a bundle, in which staple fibers are aligned in one direction, is irradiated with an electron beam to provide an activating group and/or produce a radical on a surface of the fibers, and a compound including an ethylenic unsaturated double bond is chemically bonded to the surface of the fibers. A spun yarn of the invention is a spun yarn having a deodorizing and/or heat-generating moisture absorption function, including the above-described sliver for spinning that has been spun, or including the above-described sliver for spinning and a sliver other than the sliver for spinning that have been blended and spun. A fiber product of the invention has a deodorizing and/or heat-generating moisture absorption function, including the above-described spun yarn.

Abstract: A sliver for spinning of the invention is a sliver for spinning having a deodorizing function and/or a heat-generating moisture absorption function, wherein a sliver for spinning formed as a bundle in which staple fibers are aligned in one direction is irradiated with an electron beam to provide an activating group and/or produce a radical on a surface of the fibers, and a compound including an ethylenic unsaturated double bond is chemically bonded to the surface of the fibers. A spun yarn of the invention is a spun yarn having a deodorizing function and/or a heat-generating moisture absorption function, including the above-described sliver for spinning that has been spun, or including the above-described sliver for spinning and a sliver other than the sliver for spinning that have been blended and spun. A fiber product of the invention has a deodorizing function and/or a heat-generating moisture absorption function, including the above-described spun yarn.

Abstract: A semiconductor device manufacturing method by which an organic resin film is formed on a semiconductor substrate in which integrated circuit elements and a wiring pattern have been formed and the entire circuit is sealed in a mold resin, includes a step of using an exposure mask having at least a pattern finer than the resolution limit of the organic resin to form a plurality of cavities on the surface of the organic resin film.

Abstract: A process for producing a semiconductor device which comprises forming a layer of an organic polymer resin on a surface of a semiconductor element, treating the formed layer by pattern working and curing, etching the element using the patterned and cured layer as a mask, exposing an electric conductive layer at open portions, treating the element with oxygen plasma at a temperature of 100° C. or higher and cleaning the electric conductive layer at the open portions. When the electric conductive layer at open portions is cleaned by the oxygen plasma treatment, formation of cracks on the organic protective layer is suppressed and adhesion between the organic protective layer and a sealing resin is improved.

Abstract: A process for producing a semiconductor device which comprises forming a layer of an organic polymer resin on a surface of a semiconductor element, treating the formed layer by pattern working and curing, etching the element using the patterned and cured layer as a mask, exposing an electric conductive layer at open portions, treating the element with oxygen plasma at a temperature of 100° C. or higher and cleaning the electric conductive layer at the open portions.

Abstract: A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated.

Abstract: A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated.

Abstract: Upon the formation of a film on a semiconductor substrate by spin coating method, a polyimide precursor solution as a film forming solution is supplied dropwise onto the semiconductor substrate, and then the semiconductor substrate is started to be rotated at a low revolving speed of 1,000 rpm while pure water as an adhesion protecting liquid is injected upon the backside of the semiconductor substrate. By this operation, the polyimide precursor solution is spread out over the above surface of the semiconductor substrate by the rotation thereof. On the other hand, pure water is injected on the backside of the substrate before the dropped solution reaches the periphery of the substrate. As a result, the polyimide precursor liquid is prevented from going around to the backside of the substrate by the injection of pure water, thus protecting the adhesion of the polyimide precursor solution onto the backside of the substrate.