Abstract: In the present invention, temperature drop amounts of heating plate regions when the substrate is mounted on a heating plate are detected to detect a warped state of the substrate. From the temperature drop amounts of the heating plate regions, correction values for set temperatures of the heating plate regions are calculated. The calculation of the correction values for the set temperatures of the heating plate regions is performed by estimating steady temperatures within the substrate to be heat-processed on the heating plate from the temperature drop amounts of the heating plate regions using a correlation obtained in advance. From the estimated steady temperatures within the substrate and the temperature drop amounts of the heating regions, the correction values for the set temperatures of the heating plate regions are calculated. Based on the correction values for the set temperatures, the set temperatures of the heating plate regions are changed.

Abstract: The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.

Abstract: In the present invention, temperature drop amounts of heating plate regions when the substrate is mounted on a heating plate are detected to detect a warped state of the substrate. From the temperature drop amounts of the heating plate regions, correction values for set temperatures of the heating plate regions are calculated. The calculation of the correction values for the set temperatures of the heating plate regions is performed by estimating steady temperatures within the substrate to be heat-processed on the heating plate from the temperature drop amounts of the heating plate regions using a correlation obtained in advance. From the estimated steady temperatures within the substrate and the temperature drop amounts of the heating regions, the correction values for the set temperatures of the heating plate regions are calculated. Based on the correction values for the set temperatures, the set temperatures of the heating plate regions are changed.

Abstract: A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

Abstract: In the present invention, temperature drop amounts of heating plate regions when the substrate is mounted on a heating plate are detected to detect a warped state of the substrate. From the temperature drop amounts of the heating plate regions, correction values for set temperatures of the heating plate regions are calculated. The calculation of the correction values for the set temperatures of the heating plate regions is performed by estimating steady temperatures within the substrate to be heat-processed on the heating plate from the temperature drop amounts of the heating plate regions using a correlation obtained in advance. From the estimated steady temperatures within the substrate and the temperature drop amounts of the heating regions, the correction values for the set temperatures of the heating plate regions are calculated. Based on the correction values for the set temperatures, the set temperatures of the heating plate regions are changed.

Abstract: A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.

Abstract: A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

Abstract: The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.

Abstract: The disclosed heating device is to perform a heating process on an exposed substrate formed with a resist film before a developing process, the device including a heating part to perform a heating process on the exposed substrate, the heating part including a plurality of two-dimensionally arranged heating elements; a seating part provided at an upper side of the heating part, on which the substrate is disposed; and a control part to correct a setting temperature of the heating part based on temperature correction values, and to control the heating part based on the corrected setting temperature, during the heating process on one substrate by the heating part, wherein the temperature correction values being previously obtained from measured critical dimensions of the resist pattern in another substrate formed with the resist pattern through the heating process by the heating part and then the developing process.

Abstract: A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

Abstract: The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction valu

Abstract: In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.

Abstract: A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency.

Abstract: Temperature setting of a thermal plate is performed so that the line width of a resist pattern is uniformly formed within a wafer. The thermal plate of a PEB unit is divided into a plurality of thermal plate regions so that the temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the wafer mounted on the thermal plate is set for each of the thermal plate regions of the thermal plate. The temperature correction value for each of the thermal plate regions of the thermal plate is set after calculation by a calculation model created from a correlation between a line width of the resist pattern formed by thermal processing on the thermal plate and the temperature correction value. The calculation model M calculates the temperature correction value to make the line width uniform within the wafer, based on a line width measured value of the resist pattern.

Abstract: A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

Abstract: In the present invention, a thermal plate is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the wafer for which the photolithography process has been finished are first measured, and Zernike coefficients of a Zernike polynomial indicating a plurality of in-plane tendency components are calculated from the measured values of the line widths within the wafer. Then, the temperature correction values for the regions of the thermal plate to bring the calculated Zernike coefficients close to 0 are calculated using a calculation model indicating a correlation between change amounts of the Zernike coefficients and the temperature correction values.

Abstract: In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated.

Abstract: A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

Abstract: The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction valu

Abstract: A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.