Patents by Inventor Masahide Tsutsumi

Masahide Tsutsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BONDED SOI SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090093106
    Abstract: This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.
    Type: Application
    Filed: September 24, 2008
    Publication date: April 9, 2009
    Applicant: SUMCO CORPORATION
    Inventors: Shinichi TOMITA, Masahide Tsutsumi
  • Bonded SOI substrate, and method for manufacturing the same
    Patent number: 7442992
    Abstract: This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: October 28, 2008
    Assignee: Sumco Corporation
    Inventors: Shinichi Tomita, Masahide Tsutsumi
  • Bonded SOI substrate, and method for manufacturing the same
    Publication number: 20060055003
    Abstract: This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.
    Type: Application
    Filed: May 18, 2005
    Publication date: March 16, 2006
    Applicant: SUMCO CORPORATION
    Inventors: Shinichi Tomita, Masahide Tsutsumi